Leakage–delay tradeoff in FinFET logic circuits: A comparative analysis with bulk technology
In this paper, we study the advantages offered by multi-gate fin FETs (FinFETs) over
traditional bulk MOSFETs when low standby power circuit techniques are implemented …
traditional bulk MOSFETs when low standby power circuit techniques are implemented …
Characterization and modeling of current transport in metal/ferroelectric/semiconductor tunnel junctions
G Franchini, AS Spinelli, G Nicosia… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Although metal/ferroelectric/semiconductor tunnel junctions have been attracting
widespread interest as next-generation memory devices, only limited effort has been …
widespread interest as next-generation memory devices, only limited effort has been …
A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
The algorithm is suggested for calculating the I–V characteristics of a voltage-or current-
controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical …
controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical …
Current Tunnelling in MOS Devices with Al2O3/SiO2 Gate Dielectric
With the continued scaling of the SiO2 thickness below 2 nm in CMOS devices, a large direct‐
tunnelling current flow between the gate electrode and silicon substrate is greatly impacting …
tunnelling current flow between the gate electrode and silicon substrate is greatly impacting …
A comparison of modeling approaches for current transport in polysilicon-channel nanowire and macaroni GAA MOSFETs
In this paper, we compare quantitatively the results obtained from the numerical simulation
of current transport in polysilicon-channel MOSFETs under different modeling assumptions …
of current transport in polysilicon-channel MOSFETs under different modeling assumptions …
Modeling of ferroelectric tunnel junctions based on the Pt/BaTiO3/Nb: SrTiO3 stack
M Dossena, G Malavena, AS Spinelli… - Journal of Applied …, 2022 - pubs.aip.org
In this paper, we report a comprehensive modeling investigation of the Pt/BaTiO 3/Nb: SrTiO
3 stack designed to operate as a Ferroelectric Tunnel Junction (FTJ). The analysis accounts …
3 stack designed to operate as a Ferroelectric Tunnel Junction (FTJ). The analysis accounts …
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
In this paper we compare advanced modeling approaches for the determination of the drain
current in nanoscale MOSFETs. Transport models range from drift–diffusion to direct …
current in nanoscale MOSFETs. Transport models range from drift–diffusion to direct …
Analytical modeling of tunneling current through SiO2–HfO2 stacks in metal oxide semiconductor structures
This work presents an original approach to model direct tunneling current through high-κ
dielectrics including Si O 2 interfacial oxide from electron inversion layers. Quantum …
dielectrics including Si O 2 interfacial oxide from electron inversion layers. Quantum …
Unified tunnelling-diffusion theory for Schottky and very thin MOS structures
J Racko, P Valent, P Benko, D Donoval, L Harmatha… - Solid-state …, 2008 - Elsevier
We derive general formulae for calculating the transport of free charge carriers in a MOS
structure with a thin insulating layer. In particular, we obtain relationships for boundary …
structure with a thin insulating layer. In particular, we obtain relationships for boundary …
Modeling and simulation approaches for gate current computation
This book provides a comprehensive review of the state-of-the-art in the development of new
and innovative materials, and of advanced modeling and characterization methods for …
and innovative materials, and of advanced modeling and characterization methods for …