Recent developments in the controlled movement of domain walls in magnetic nanowires by
short pulses of spin-polarized current give promise of a nonvolatile memory device with the …

The manipulation of a magnetic domain wall (DW) by a spin polarized current in
ferromagnetic nanowires has attracted tremendous interest during the last years due to …

Memristors are non-volatile nano-resistors which resistance can be tuned by applied
currents or voltages and set to a large number of levels. Thanks to these properties …

The spin transfer torque is essential for electrical magnetization switching,. When a magnetic
domain wall is driven by an electric current through an adiabatic spin torque, the theory …

Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowires with
a stack structure of Ta (1.0 nm)/CoFeB (1.2 nm)/MgO (2.0 nm)/Ta (1.0 nm) was investigated …

We have studied the domain-wall dynamics in Ta-CoFeB-MgO ultra-thin films with
perpendicular magnetic anisotropy for various Co and Fe concentrations in both the …

Current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy
was analyzed by using micromagnetic simulation. The threshold current density of …

We consider long and narrow spin valves composed of a first magnetic layer with a single
domain wall (DW), a normal metal spacer, and a second magnetic layer that is a planar or a …

We report the direct observation of the current-driven domain wall (DW) motion by magnetic
force microscopy in a structured Co/Ni wire with perpendicular magnetic anisotropy. The …

Magnetic tunneling junction (MTJ)-based programmable logic devices have been proposed
and studied for future reconfigurable and nonvolatile computation devices and systems …