Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
H Morkoc, S Strite, GB Gao, ME Lin… - Journal of Applied …, 1994 - pubs.aip.org
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC,
GaN, and ZnSe, has led to major advances which now make them viable for device …
GaN, and ZnSe, has led to major advances which now make them viable for device …
Progress and prospects of group-III nitride semiconductors
We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …
[LIVRE][B] The blue laser diode: GaN based light emitters and lasers
S Nakamura, G Fasol - 2013 - books.google.com
Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related
materials has recently propelled these materials into the mainstream of interest. It is very …
materials has recently propelled these materials into the mainstream of interest. It is very …
The blue laser diode. The complete story
The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book
that he enjoys this fact and wishes his readers to become familiar with his success …
that he enjoys this fact and wishes his readers to become familiar with his success …
[LIVRE][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
Two-dimensional carbon nanostructures: Fundamental properties, synthesis, characterization, and potential applications
Since its discovery in less than five years ago, graphene has become one of the hottest
frontiers in materials science and condensed matter physics, as evidenced by the …
frontiers in materials science and condensed matter physics, as evidenced by the …
Growth of group III nitrides. A review of precursors and techniques
DA Neumayer, JG Ekerdt - Chemistry of materials, 1996 - ACS Publications
The AlGaInN quaternary alloy system is uniquely suited for numerous device applications
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …
Reconstructions of the Surface
Abstract Reconstructions of the GaN (000 1) surface are studied for the first time. Using
scanning tunneling microscopy and reflection high-energy electron diffraction, four primary …
scanning tunneling microscopy and reflection high-energy electron diffraction, four primary …
Determination of wurtzite GaN lattice polarity based on surface reconstruction
We identify two categories of reconstructions occurring on wurtzite GaN surfaces, the first
associated with the N face, 0001, and the second associated with the Ga face, 0001. Not …
associated with the N face, 0001, and the second associated with the Ga face, 0001. Not …
Progress and prospects for GaN and the III–V nitride semiconductors
S Strite, ME Lin, H Morkoc - Thin Solid Films, 1993 - Elsevier
We review recent research results pertaining to GaN, AIN and InN, focusing on present-day
techniques and future prospects. The molecular beam epitaxy and metal-organic vapor …
techniques and future prospects. The molecular beam epitaxy and metal-organic vapor …