Unexpected transition from single to double quantum well potential induced by intense laser fields in a semiconductor quantum well
FMS Lima, MA Amato, OAC Nunes… - Journal of Applied …, 2009 - pubs.aip.org
When an electronic system is irradiated by an intense laser field, the potential “seen” by
electrons is modified, which affects significantly the bound-state energy levels, a feature that …
electrons is modified, which affects significantly the bound-state energy levels, a feature that …
Circular-Polarization-Dependent Study of the Microwave Photoconductivity<? format?> in a Two-Dimensional Electron System
JH Smet, B Gorshunov, C Jiang, L Pfeiffer, K West… - Physical review …, 2005 - APS
The polarization dependence of the low field microwave photoconductivity and absorption of
a two-dimensional electron system has been investigated in a quasioptical setup in which …
a two-dimensional electron system has been investigated in a quasioptical setup in which …
Microwave-induced resistance oscillations on a high-mobility two-dimensional electron gas: Exact waveform, absorption/reflection and temperature dam**
In this work we address experimentally a number of unresolved issues related to microwave
induced resistance oscillations (MIROs) leading to the zero-resistance states observed …
induced resistance oscillations (MIROs) leading to the zero-resistance states observed …
Electronic and intraband optical properties of single quantum rings under intense laser field radiation
The influence of an intense laser field on one-electron states and intraband optical
absorption coefficients is investigated in two-dimensional GaAs/Ga 0.7 Al 0.3 As quantum …
absorption coefficients is investigated in two-dimensional GaAs/Ga 0.7 Al 0.3 As quantum …
Nonlinear growth in the amplitude of radiation-induced magnetoresistance oscillations
We report the observation of inverse magnetic field periodic, radiation-induced
magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W …
magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W …
Resonant phonon scattering in quantum hall systems driven by DC electric fields
W Zhang, MA Zudov, LN Pfeiffer, KW West - Physical review letters, 2008 - APS
Using dc excitation to spatially tilt Landau levels, we study resonant acoustic phonon
scattering in two-dimensional electron systems. We observe that dc electric field strongly …
scattering in two-dimensional electron systems. We observe that dc electric field strongly …
Theory of microwave-induced zero-resistance states in two-dimensional electron systems
SA Mikhailov - Physical Review B—Condensed Matter and Materials …, 2011 - APS
The phenomena of microwave-induced zero-resistance states (MIZRS) and microwave-
induced resistance oscillations (MIRO) were discovered in ultraclean two-dimensional …
induced resistance oscillations (MIRO) were discovered in ultraclean two-dimensional …
Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations
In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating in
situ the electric field of linearly polarized microwaves relative to the current, on the …
situ the electric field of linearly polarized microwaves relative to the current, on the …
Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas
The frequency dependence of microwave-induced resistance oscillations (MIROs) has been
studied experimentally in high-mobility electron Ga As∕ Al Ga As structures to explore the …
studied experimentally in high-mobility electron Ga As∕ Al Ga As structures to explore the …
Phase study of oscillatory resistances in microwave-irradiated-and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect
RG Mani, WB Johnson, V Umansky… - Physical Review B …, 2009 - APS
We report the experimental results from a dark study and a photoexcited study of the high-
mobility GaAs/AlGaAs system at large filling factors, ν. At large ν, the dark study indicates …
mobility GaAs/AlGaAs system at large filling factors, ν. At large ν, the dark study indicates …