On the nature of majority and minority traps in β-Ga2O3: A review
In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
Recent advances in NiO/Ga2O3 heterojunctions for power electronics
X Lu, Y Deng, Y Pei, Z Chen… - Journal of Semiconductors, 2023 - iopscience.iop.org
Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
Superior high temperature performance of 8 kV NiO/Ga 2 O 3 vertical heterojunction rectifiers
JS Li, CC Chiang, X ** and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-
deposited p-type NiO forming ap–n junction with thick (10 µm) Ga2O3 drift layers grown by …
deposited p-type NiO forming ap–n junction with thick (10 µm) Ga2O3 drift layers grown by …
Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode
Here, we propose a p-type copper aluminum oxide (p-CuAlO 2) interlayer for the high
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …
Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
AY Polyakov, DS Saranin, IV Shchemerov… - Scientific Reports, 2024 - nature.com
Abstract p-NiO/n-Ga2O3 heterojunction (HJ) diodes exhibit much larger changes in their
properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the …
properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the …
Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes
ZP Wang, HH Gong, XX Yu, TC Hu, XL Ji… - Applied Physics …, 2023 - pubs.aip.org
In this Letter, the trap inhomogeneity within β-Ga2O3 is correlated with the conversion of
Shockley–Read–Hall (SRH) recombination in NiO/β-Ga2O3 p+–n heterojunction diodes. For …
Shockley–Read–Hall (SRH) recombination in NiO/β-Ga2O3 p+–n heterojunction diodes. For …
Ga2O3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention
K Xu, B Peng, H Mao, Z Wang, H Gong… - The Journal of …, 2024 - ACS Publications
The human brain efficiently processes only a fraction of visual information, a phenomenon
termed attentional control, resulting in energy savings and heightened adaptability …
termed attentional control, resulting in energy savings and heightened adaptability …