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Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …
demand for high-performance computing (HPC) has been increasing, driving the …
High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits
S Yamazaki, F Isaka, T Ohno, Y Egi, S Tezuka… - Communications …, 2024 - nature.com
Formation of a single crystalline oxide semiconductor on an insulating film as a channel
material capable of three-dimensional (3D) stacking would enable 3D very-large-scale …
material capable of three-dimensional (3D) stacking would enable 3D very-large-scale …
Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated Into Eight Stacked Ge0.95Si0.05 Nanowires and Nanosheets nFETs to Boost ION
WJ Chen, YC Liu, YW Chen, YR Chen… - … on Electron Devices, 2023 - ieeexplore.ieee.org
By taking advantage of extremely high dielectric constant () of 47, the Hf0. 2Zr0. 8O2 gate
stacks are integrated into the eight stacked high mobility Ge0. 95Si0. 05 channels with low …
stacks are integrated into the eight stacked high mobility Ge0. 95Si0. 05 channels with low …
Top-gate indium-tin-oxide power transistors featuring high breakdown voltage of 156 V
In this letter, a top-gate (TG) indium-tin-oxide (ITO) power field-effect transistor (FET) with
offset design is reported for the first time and carefully investigated by both simulations and …
offset design is reported for the first time and carefully investigated by both simulations and …
ALD Nanometer-Thin In2O3 for BEOL Logic, Memory and RF Applications
DY Peide - 2023 Silicon Nanoelectronics Workshop (SNW), 2023 - ieeexplore.ieee.org
Oxide semiconductors have been a mature technology in display-panel and recently
considered as promising back-end-of-line (BEOL) compatible channel materials for …
considered as promising back-end-of-line (BEOL) compatible channel materials for …