High-K materials and metal gates for CMOS applications
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Applications of atomic layer deposition to nanofabrication and emerging nanodevices
H Kim, WJ Maeng - Thin solid films, 2009 - Elsevier
Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …
increased enormously. For nanoscale devices especially, each of the layers should be as …
Evidence of low interface trap density in GeO2∕ Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
H Matsubara, T Sasada, M Takenaka… - Applied physics letters, 2008 - pubs.aip.org
We have fabricated Ge O 2∕ Ge metal-oxide-semiconductor (MOS) structures by direct
thermal oxidation of Ge substrates. The interface trap density (D it) of Al∕ Ge O 2∕ Ge MOS …
thermal oxidation of Ge substrates. The interface trap density (D it) of Al∕ Ge O 2∕ Ge MOS …
Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using Gate Stacks Fabricated by Plasma Postoxidation
R Zhang, PC Huang, JC Lin, N Taoka… - … on Electron Devices, 2013 - ieeexplore.ieee.org
An ultrathin equivalent oxide thickness (EOT) HfO 2/Al 2 O 3/Ge gate stack has been
fabricated by combining the plasma postoxidation method with a 0.2-nm-thick Al 2 O 3 layer …
fabricated by combining the plasma postoxidation method with a 0.2-nm-thick Al 2 O 3 layer …
Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
R Zhang, T Iwasaki, N Taoka, M Takenaka… - Applied Physics …, 2011 - pubs.aip.org
An electron cyclotron resonance (ECR) plasma postoxidation method has been employed
for forming Al 2 O 3/GeO x/Ge metal-oxide-semiconductor (MOS) structures. X-ray …
for forming Al 2 O 3/GeO x/Ge metal-oxide-semiconductor (MOS) structures. X-ray …
Ultimate scaling of CMOS logic devices with Ge and III–V materials
M Heyns, W Tsai - Mrs bulletin, 2009 - cambridge.org
Over the years, many new materials have been introduced in advanced complementary
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …
Enabling energy efficiency and polarity control in germanium nanowire transistors by individually gated nanojunctions
Germanium is a promising material for future very large scale integration transistors, due to
its superior hole mobility. However, germanium-based devices typically suffer from high …
its superior hole mobility. However, germanium-based devices typically suffer from high …