Observing and measuring strain in nanostructures and devices with transmission electron microscopy
MJ Hÿtch, AM Minor - MRS bulletin, 2014 - cambridge.org
The evolution of elastic strain engineering in nanostructures and devices requires
characterization tools that can be used to not only observe but also quantify the actual strain …
characterization tools that can be used to not only observe but also quantify the actual strain …
[HTML][HTML] Strain map** of semiconductor specimens with nm-scale resolution in a transmission electron microscope
The last few years have seen a great deal of progress in the development of transmission
electron microscopy based techniques for strain map**. New techniques have appeared …
electron microscopy based techniques for strain map**. New techniques have appeared …
Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark …
Convergent beam electron diffraction (CBED), nano-beam electron diffraction (NBED or
NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron holography …
NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron holography …
Lattice and strain analysis of atomic resolution Z-contrast images based on template matching
A real space approach is developed based on template matching for quantitative lattice
analysis using atomic resolution Z-contrast images. The method, called TeMA, uses the …
analysis using atomic resolution Z-contrast images. The method, called TeMA, uses the …
Strain-induced performance enhancement of trigate and omega-gate nanowire FETs scaled down to 10-nm width
A detailed study of performance in uniaxially strained Si nanowire (NW) transistors
fabricated by lateral strain relaxation of biaxial strained-SOI (sSOI) substrate is presented …
fabricated by lateral strain relaxation of biaxial strained-SOI (sSOI) substrate is presented …
[BOOK][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
3D strain measurement of heterostructures using the scanning transmission electron microscopy moiré depth sectioning method
H Wen, H Zhang, R Peng, C Liu, S Liu, F Liu… - Small …, 2023 - Wiley Online Library
The mechanical properties of micro‐and nanoscale materials directly determine the
reliability of heterostructures, microstructures, and microdevices. Therefore, an accurate …
reliability of heterostructures, microstructures, and microdevices. Therefore, an accurate …
[BOOK][B] Principles of Electron Optics, Volume 3: Fundamental Wave Optics
PW Hawkes, E Kasper - 2022 - books.google.com
Principles of Electron Optic: Volume Three: Wave Optics, discusses this essential topic in
microscopy to help readers understand the propagation of electrons from the source to the …
microscopy to help readers understand the propagation of electrons from the source to the …
Towards quantitative electrostatic potential map** of working semiconductor devices using off-axis electron holography
Pronounced improvements in the understanding of semiconductor device performance are
expected if electrostatic potential distributions can be measured quantitatively and reliably …
expected if electrostatic potential distributions can be measured quantitatively and reliably …
Determination of stress, strain, and elemental distribution within In (Ga) As quantum dots embedded in GaAs using advanced transmission electron microscopy
Non-truncated pyramidal In (Ga) As quantum dots (QDs) embedded in GaAs were obtained
by a combination of low temperature/high rate GaAs covering of InAs QDs. We use …
by a combination of low temperature/high rate GaAs covering of InAs QDs. We use …