Shot noise of coupled semiconductor quantum dots

G Kiesslich, A Wacker, E Schöll - Physical Review B, 2003 - APS
The low-frequency shot noise properties of two electrostatically coupled semiconductor
quantum dot states which are connected to emitter/collector contacts are studied. A master …

Coulomb effects in tunneling through a quantum dot stack

H Sprekeler, G Kießlich, A Wacker, E Schöll - Physical Review B, 2004 - APS
Tunneling through two vertically coupled quantum dots is studied by means of a Pauli
master equation model. The observation of double peaks in the current-voltage …

Nonlinear charging effect of quantum dots in a diode

G Kießlich, A Wacker, E Schöll, SA Vitusevich… - Physical Review B, 2003 - APS
The current through ap− i− n diode containing a layer of self-assembled InAs quantum dots
in the intrinsic region is investigated. A series of peaks is observed in the differential …

Interaction effects in electric transport through self-assembled molecular monolayers

M Leijnse - Physical Review B—Condensed Matter and Materials …, 2013 - APS
We theoretically investigate the effect of intermolecular Coulomb interactions on transport
through self-assembled molecular monolayers (or other devices based on a large number of …

Shot noise in tunneling through a quantum dot array

G Kiesslich, A Wacker, E Schöll, A Nauen… - … status solidi (c), 2003 - Wiley Online Library
The shot noise suppression in a sample containing a layer of self‐assembled InAs quantum
dots has been investigated experimentally and theoretically. The observation of a non …

Charge order in an interacting monolayer under transverse bias

T Ludwig, C Timm - Physical Review B, 2016 - APS
A monolayer of molecules or quantum dots sandwiched between electrodes can be driven
out of equilibrium by the application of a bias voltage between the electrodes. We study …

Observation of the anomalous temperature dependence of resonance tunneling through zero-dimensional states in a quantum well with dynamic coulomb interaction …

EE Vdovin, YN Khanin, M Henini - JETP letters, 2012 - Springer
Magnetic tunneling through zero-dimensional states in a weakly silicon-doped GaAs
quantum well of a resonance-tunneling diode, which lie deeper than the levels of isolated …

Many‐Particle Charging Effects and Recombination Current through a Quantum Dot Array

G Kießlich, A Wacker, E Schöll - physica status solidi (b), 2002 - Wiley Online Library
A numerical analysis of the stationary current–voltage characteristic of ap–i–n diode
comprising a layer of self‐organized quantum dots is presented. For bias voltages below the …

[PDF][PDF] Current instabilities in resonant tunneling quantum dot structures

K Ludge, E Scholl - Physics of Semiconductors; Part B, 2007 - scholar.archive.org
We investigate nonlinear charge transport through quantum dots embedded in a double
barrier resonant tunneling structure. Depending upon the parameters of the circuit in which …

[PDF][PDF] Nonlinear transport properties of quantum dot systems

G Kießlich - 2005 - depositonce.tu-berlin.de
This work deals with the theoretical investigation and description of nonlinear electronic
transport through coupled quantum dot systems by means of various approaches. The …