Nanoscale growth initiation as a pathway to improve the earth-abundant absorber zinc phosphide
Growth approaches that limit the interface area between layers to nanoscale regions are
emerging as a promising pathway to limit the interface defect formation due to mismatching …
emerging as a promising pathway to limit the interface defect formation due to mismatching …
Carrier generation and collection in Zn3P2/InP heterojunction solar cells
R Paul, SW Tabernig, JR Sapera, J Hurni… - Solar Energy Materials …, 2023 - Elsevier
Abstract Zinc phosphide (Zn 3 P 2) has been lauded as a promising solar absorber material
due to its functional properties and the abundance of zinc and phosphorous. In the last 4 …
due to its functional properties and the abundance of zinc and phosphorous. In the last 4 …
van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics
Earth-abundant semiconducting materials are a potential solution for large-scale
deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth …
deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth …
Aspect ratio controlled synthesis of tellurium nanowires for photovoltaic applications
Here, we report an aspect ratio-controlled synthesis of tellurium (Te) nanowires (NWs)
utilizing a hot-injection colloidal method. The synthetic method uses low cost materials …
utilizing a hot-injection colloidal method. The synthetic method uses low cost materials …
The path towards 1 µm monocrystalline Zn3P2 films on InP: substrate preparation, growth conditions and luminescence properties
Semiconductors made with earth abundant elements are promising as absorbers in future
large-scale deployment of photovoltaic technology. This paper reports on the epitaxial …
large-scale deployment of photovoltaic technology. This paper reports on the epitaxial …
Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning
Large-scale deployment of thin-film photovoltaics will be facilitated through earth-abundant
components. Herein, selective area epitaxy and lateral overgrowth epitaxy are explored for …
components. Herein, selective area epitaxy and lateral overgrowth epitaxy are explored for …
Measuring the optical absorption of single nanowires
MY Swinkels, A Campo, D Vakulov, W Kim… - Physical Review …, 2020 - APS
In this work we present a method to quantitatively measure the optical absorption of single
nanowires that can be applied over a wide range of temperatures and with a high enough …
nanowires that can be applied over a wide range of temperatures and with a high enough …
Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires
Earth-abundant and low-cost semiconductors, such as zinc phosphide (Zn 3 P 2), are
promising candidates for the next generation photovoltaic applications. However, synthesis …
promising candidates for the next generation photovoltaic applications. However, synthesis …
Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber
Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral
range relevant for single junction photovoltaic applications. It is made of elements abundant …
range relevant for single junction photovoltaic applications. It is made of elements abundant …
[HTML][HTML] Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+ y thin films
Scalable and sustainable photovoltaic technologies require low-cost and earth-abundant
semiconducting materials. Zinc phosphide is purported to be an absorber material with …
semiconducting materials. Zinc phosphide is purported to be an absorber material with …