Weak lensing combined with the kinetic Sunyaev–Zel'dovich effect: a study of baryonic feedback

L Bigwood, A Amon, A Schneider… - Monthly Notices of …, 2024 - academic.oup.com
Extracting precise cosmology from weak lensing surveys requires modelling the non-linear
matter power spectrum, which is suppressed at small scales due to baryonic feedback …

Follow-up analyses to the O3 LIGO–Virgo–KAGRA lensing searches

J Janquart, M Wright, S Goyal, JCL Chan… - Monthly Notices of …, 2023 - academic.oup.com
Along their path from source to observer, gravitational waves may be gravitationally lensed
by massive objects leading to distortion in the signals. Searches for these distortions …

KiDS-1000 and DES-Y1 combined: Cosmology from peak count statistics

J Harnois-Déraps, S Heydenreich… - Monthly Notices of …, 2024 - academic.oup.com
We analyse the fourth data release of the Kilo Degree Survey (KiDS-1000) and extract
cosmological parameter constraints based on the cosmic shear peak count statistics. Peaks …

[HTML][HTML] A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

Q Shangguan, Y Lv, C Jiang - Nanomaterials, 2024 - pmc.ncbi.nlm.nih.gov
Although the irreplaceable position of silicon (Si) semiconductor materials in the field of
information has become a consensus, new materials continue to be sought to expand the …

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

MW Feil, M Weger, H Reisinger, T Aichinger… - Physical Review …, 2024 - APS
Fully processed SiC power MOSFETs emit light during switching of the gate terminal, while
the drain and source terminals are both grounded. The emitted photons are caused by …

Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

K Onishi, T Nakanuma, K Tahara, K Kutsuki… - Applied Physics …, 2024 - iopscience.iop.org
We report on an approach to produce single photon emitters at the SiO 2/SiC interface. We
form a high-quality SiO 2/SiC interface by high-temperature oxidation and subsequently …