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Weak lensing combined with the kinetic Sunyaev–Zel'dovich effect: a study of baryonic feedback
Extracting precise cosmology from weak lensing surveys requires modelling the non-linear
matter power spectrum, which is suppressed at small scales due to baryonic feedback …
matter power spectrum, which is suppressed at small scales due to baryonic feedback …
Follow-up analyses to the O3 LIGO–Virgo–KAGRA lensing searches
J Janquart, M Wright, S Goyal, JCL Chan… - Monthly Notices of …, 2023 - academic.oup.com
Along their path from source to observer, gravitational waves may be gravitationally lensed
by massive objects leading to distortion in the signals. Searches for these distortions …
by massive objects leading to distortion in the signals. Searches for these distortions …
KiDS-1000 and DES-Y1 combined: Cosmology from peak count statistics
J Harnois-Déraps, S Heydenreich… - Monthly Notices of …, 2024 - academic.oup.com
We analyse the fourth data release of the Kilo Degree Survey (KiDS-1000) and extract
cosmological parameter constraints based on the cosmic shear peak count statistics. Peaks …
cosmological parameter constraints based on the cosmic shear peak count statistics. Peaks …
[HTML][HTML] A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics
Q Shangguan, Y Lv, C Jiang - Nanomaterials, 2024 - pmc.ncbi.nlm.nih.gov
Although the irreplaceable position of silicon (Si) semiconductor materials in the field of
information has become a consensus, new materials continue to be sought to expand the …
information has become a consensus, new materials continue to be sought to expand the …
Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs
Fully processed SiC power MOSFETs emit light during switching of the gate terminal, while
the drain and source terminals are both grounded. The emitted photons are caused by …
the drain and source terminals are both grounded. The emitted photons are caused by …
Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures
We report on an approach to produce single photon emitters at the SiO 2/SiC interface. We
form a high-quality SiO 2/SiC interface by high-temperature oxidation and subsequently …
form a high-quality SiO 2/SiC interface by high-temperature oxidation and subsequently …