Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many
properties that make it widely studied in the material science, physics, chemistry …

In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the
research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate …

The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

Thin-film transistors made of solution-processed metal oxide semiconductors hold great
promise for application in the emerging sector of large-area electronics. However, further …

In the last decades, oxide thin-film transistors (TFTs) have been extensively developed for
optoelectronic applications owing to their outstanding electrical properties, such as excellent …

Abstract β-Al 2x Ga 2-2x O 3 alloy thin films were successfully grown on (100)-oriented β-Ga
2 O 3 single-crystal substrates by plasma-assisted molecular beam epitaxy. The films were …

The inherently complex chemical and crystallographic nature of oxide materials has
suppressed the purities achievable in laboratory environments, obscuring the rich physical …

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures
provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG …

We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on
sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent …

High‐performance solution‐processed metal oxide (MO) thin‐film transistors (TFTs) are
realized by fabricating a homojunction of indium oxide (In2O3) and polyethylenimine (PEI) …