▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …

A surface-emitting semiconductor laser structure with a vertical cavity, extremely short gain
medium length, and enhanced gain at a specific design wavelength is described. The active …

\Ve have performed a semi-empirical calculation of the refractive index changes induced by
a perpendicular electric field in quantum weBs. This calculation is based on experimental …

We present the experimental and theoretical considerations needed to determine the
mechanisms of quadratic electro-optic modulation in dye-doped polymer systems. The …

Presents a complete analysis of waveguide phase modulators based on the depletion-edge-
translation concept. The phenomena taking place inside the depletion region which …

The dynamic characteristics, and in particular the modulation bandwidth, of high-speed
semiconductor lasers are determined by intrinsic factors and extrinsic parameters. In …

We use semi-insulating multiple quantum wells to combine the holographic properties of the
photorefractive effect with the large resonant optical nonlinearities of quantum-confined …

The linear (r4t) and quadratic (R,, and RI,) electro-optic coefficients of GaAs have been
measured at the wavelengths 1.32 and 1.52 pm using single-mode AlGaAs/GaAs strip …

FIG. I. Spectra for incident TM polarization.(a) Change in refractive illdex of waveguide
induced by electric field 9.3 X 104 V em I; solid line is a calculation as discussed ill text.(b) …