Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes
Monolithic integration of GaSb-based optoelectronic devices on Si is a promising approach
for achieving a low-cost, compact, and scalable infrared photonics platform. While …
for achieving a low-cost, compact, and scalable infrared photonics platform. While …
Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement
M Fahed, L Desplanque, D Troadec… - …, 2016 - iopscience.iop.org
The growth of in-plane GaSb nanotemplates on a GaAs (001) substrate is demonstrated
combining nanoscale patterning of the substrate and selective area heteroepitaxy. The …
combining nanoscale patterning of the substrate and selective area heteroepitaxy. The …
Room-temperature operation of low-voltage, non-volatile, compound-semiconductor memory cells
Whilst the different forms of conventional (charge-based) memories are well suited to their
individual roles in computers and other electronic devices, flaws in their properties mean …
individual roles in computers and other electronic devices, flaws in their properties mean …
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
Antiphase boundaries free GaSb epitaxial layers with low surface roughness (< 0.5 nm)
have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by …
have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by …
ULTRARAM: toward the development of a III–V semiconductor, nonvolatile, random access memory
D Lane, PD Hodgson, RJ Potter… - … on Electron Devices, 2021 - ieeexplore.ieee.org
ULTRARAM is a III-V compound semiconductor memory concept that exploits quantum
resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area …
resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area …
Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy
GaSb epilayers were grown on Si (001) using molecular beam epitaxy via AlSb quantum
dots as an interfacial misfit (IMF) array between the Si substrates and GaSb epilayers. The …
dots as an interfacial misfit (IMF) array between the Si substrates and GaSb epilayers. The …
A comparative study on GaSb epilayers grown on nominal and vicinal Si (100) substrates by molecular beam epitaxy
The direct growth of GaSb buffer layers on Si substrates is attracting considerable interest in
the integration of group III-Sb based device structures on lower-cost Si substrates. Here, we …
the integration of group III-Sb based device structures on lower-cost Si substrates. Here, we …
Heteroepitaxial integration of mid-infrared InAsSb light emitting diodes on silicon
Silicon photonics has emerged as the most promising technology for next-generation
compact optoelectronic systems, but further development is still required to achieve efficient …
compact optoelectronic systems, but further development is still required to achieve efficient …
Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon
InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were grown and
fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb substrates …
fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb substrates …
The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates
GaSb epilayers were grown on nominal Si (001) substrates by molecular beam epitaxy,
using AlSb nucleation layer (NL) as an interfacial misfit array. The effects of AlSb NL …
using AlSb nucleation layer (NL) as an interfacial misfit array. The effects of AlSb NL …