A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …
and they have played a key role in the huge development that the semiconductor industry …
Impact of Charge Trap** On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant …
S Choudhary, D Schwarz, HS Funk… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
The quest for the high speed, low power digital logic circuits urge an imperative demand of
compatible high-κ dielectric integration on novel Germanium (Ge) based channel material …
compatible high-κ dielectric integration on novel Germanium (Ge) based channel material …
Achieving Quasi Intrinsic MoS2 Performance via Liquid-Based Neutralization of Material and Interface Defects with H+ Protons
Semiconductor fabrication introduces imperfections such as dangling bonds and charge
traps on channel surfaces and interfaces. Addressing these defects becomes challenging …
traps on channel surfaces and interfaces. Addressing these defects becomes challenging …
Post-metallization annealing and photolithography effects in p-type Ge/Al2O3/Al MOS structures
In this work, the combined effect of negative tone photolithography and post-metallization
annealing (PMA) on the electrical behavior of Al/Al 2 O 3/p-Ge MOS structures are …
annealing (PMA) on the electrical behavior of Al/Al 2 O 3/p-Ge MOS structures are …
Degradation of Pt-Al2O3-Ge Metal Oxide Semiconductor Structures due to Pt-Al2O3 Induced Reactions
V Ioannou-Sougleridis, S Alafakis… - ECS Journal of Solid …, 2020 - iopscience.iop.org
In this work, Pt-alumina-Ge metal oxide semiconductor structures are investigated. An
important finding is that the Pt metal layer reacts with the underlying aluminum of the atomic …
important finding is that the Pt metal layer reacts with the underlying aluminum of the atomic …
[CITATION][C] ПАССИВАЦИЯ ДЕФЕКТОВ НА ГРАНИЦЕ РАЗДЕЛА ПОЛУПРОВОДНИК/ОКСИД ГАФНИЯ
ИГ МАРГОЛИН, ЕВ КОНДРАТЮК, АА ЧУПРИК - elibrary.ru