Low Interface Resistance in Epitaxial β-Ga2O3 Vertical Power Diodes on Silicon (100) Using TiN Buffer
Integrating Ga2O3 power electronics on a silicon substrate can reduce the system cost and
improve heat dissipation, but high on-resistance in vertical power devices is its major …
improve heat dissipation, but high on-resistance in vertical power devices is its major …
Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition
X Liu, J Wang, Z Xu, S Wang, Y Jia, Q Lu, Z Wang… - Micro and …, 2024 - Elsevier
Ga 2 O 3 is an ultrawide-band-gap semiconductor with excellent properties and promising
applications in the electronic and optoelectronics. For acting as the substrate for …
applications in the electronic and optoelectronics. For acting as the substrate for …
Selective-area growth of β-Ga2O3 nanowire films on nano-patterned Si (111) substrate by metal-organic chemical vapor deposition
W Chen, T Jiao, Z Diao, Z Li, P Chen, X Dang… - Ceramics …, 2023 - Elsevier
Abstract β-Ga 2 O 3 nanowire films were prepared on Si (111) substrate by selective area
growth (SAG) using metal-organic chemical vapor deposition (MOCVD). A large-area …
growth (SAG) using metal-organic chemical vapor deposition (MOCVD). A large-area …