Recent developments in p‐Type oxide semiconductor materials and devices

Z Wang, PK Nayak, JA Caraveo‐Frescas… - Advanced …, 2016 - Wiley Online Library
The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …

PVDF‐based ferroelectric polymers in modern flexible electronics

X Chen, X Han, QD Shen - Advanced Electronic Materials, 2017 - Wiley Online Library
Ferroelectric polymers are the most promising electroactive materials with outstanding
properties that can be integrated into a variety of flexible electronic devices. Their …

Ferroelectric analog synaptic transistors

MK Kim, JS Lee - Nano letters, 2019 - ACS Publications
Neuromorphic computing is a promising alternative to conventional computing systems as it
could enable parallel computation and adaptive learning process. However, the …

Metal oxide semiconductor thin-film transistors for flexible electronics

L Petti, N Münzenrieder, C Vogt, H Faber… - Applied Physics …, 2016 - pubs.aip.org
The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …

Organic-inorganic hybrid functional materials: An integrated platform for applied technologies

SH Mir, LA Nagahara, T Thundat… - Journal of The …, 2018 - iopscience.iop.org
Hybrid functional materials, constituting both inorganic and organic components, are
considered potential platforms for applications in extremely diverse fields such as optics …

Polymer and organic nonvolatile memory devices

P Heremans, GH Gelinck, R Muller, KJ Baeg… - Chemistry of …, 2011 - ACS Publications
Organic molecules and semiconductors have been proposed as active part of a large variety
of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we …

Gate‐coupling‐enabled robust hysteresis for nonvolatile memory and programmable rectifier in van der Waals ferroelectric heterojunctions

W Huang, F Wang, L Yin, R Cheng, Z Wang… - Advanced …, 2020 - Wiley Online Library
Ferroelectric field‐effect transistors (FeFETs) are one of the most interesting ferroelectric
devices; however, they, usually suffer from low interface quality. The recently discovered 2D …

Recent process of flexible transistor‐structured memory

Y Ni, Y Wang, W Xu - Small, 2021 - Wiley Online Library
Flexible transistor‐structured memory (FTSM) has attracted great attention for its important
role in flexible electronics. For nonvolatile information storage, FTSMs with floating‐gate …

Integration of ferroelectric materials: an ultimate solution for next-generation computing and storage devices

R Khosla, SK Sharma - ACS applied electronic materials, 2021 - ACS Publications
Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …

MoS2 nanosheets for top-gate nonvolatile memory transistor channel

HS Lee, SW Min, MK Park, YT Lee, PJ Jeon, JH Kim… - …, 2012 - inha.elsevierpure.com
Top-gate ferroelectric memory transistors with single-to triple-layered MoS 2 nanosheets
adopting poly (vinylidenefluoride-trifluoroethylene)[P (VDF-TrFE)] are demonstrated. The …