Optoelectronics will undoubtedly playamajor role in the applied sciences of the next century.
This is due to the fact that optoelectronics holds the key to future communication …

Three-terminal laser-transistors with a quantum well active region and a resonant-tunnelling
collector are proposed and considered. It is shown that the laser-transistor is controlled by …

We investigate energy transfer mechanisms from a quantum well (QW) to quantum dashes
(QDashes) separated by a few nanometer thick barrier in InAs/InGaAs/InGaAlAs/InP material …

A three‐terminal laser structure is proposed as a means to achieve laser modulation using
dynamic carrier heating. The injection of hot electrons, with energy tuned by variable joule …

Heterostructure bipolar transistors with a quantum-well base incorporated a resonant-
tunneling structure in the collector are proposed and studied theoretically. Static …

The mechanisms of injection in the recently proposed three-terminal laser structures and the
ability to effectively tune the energy yield associated with a single injected electron are …

We propose a relatively simple dynamic laser model based upon continuity equations for
electron and hole concentrations, energy balance equation and a set of rate equations …

We propose a relatively simple dynamic laser model based upon continuity equations for
electron and hole concentrations, energy balance equation and a set of rate equations …

Concept, basic physics and modeling results of a novel modulation technique, associated
with a variable heating of the electron-hole plasma in the active region of a lasing device …

Extraction and injection of clcctronv via a resonant-tunneling structure (RTS) can pro-vide a
fast heating of the clrrtron gw in the active region of three-terminal sen~ iconductor lasers [1 …