Electrolyte-gated transistors for enhanced performance bioelectronics

F Torricelli, DZ Adrahtas, Z Bao, M Berggren… - Nature Reviews …, 2021 - nature.com
Abstract Electrolyte-gated transistors (EGTs), capable of transducing biological and
biochemical inputs into amplified electronic signals and stably operating in aqueous …

Emerging electrolyte-gated transistors for neuromorphic perception

C Sun, X Liu, Q Jiang, X Ye, X Zhu… - Science and Technology …, 2023 - Taylor & Francis
With the rapid development of intelligent robotics, the Internet of Things, and smart sensor
technologies, great enthusiasm has been devoted to develo** next-generation intelligent …

Inhomogeneity in pore size appreciably lowering thermal conductivity for porous thermal insulators

L Qiu, H Zou, D Tang, D Wen, Y Feng… - Applied Thermal …, 2018 - Elsevier
It has been years since the concept that inhomogeneity in pore size has an adverse effect on
the thermal transport came into view. Typically, although some porous materials possess the …

Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at …

BS Yu, JY Jeon, BC Kang, W Lee, YH Kim, TJ Ha - Scientific reports, 2019 - nature.com
Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO)
as an active channel have attracted substantial interests with regard to high-performance …

Thermal conductivity of ZIF-8 thin-film under ambient gas pressure

B Cui, CO Audu, Y Liao, SBT Nguyen… - … applied materials & …, 2017 - ACS Publications
Thermal conductivity is a crucial parameter for managing exothermal gas adsorption in
metal organic frameworks (MOFs), but experimental studies have been limited. In this work …

Significant degradation reduction in metal oxide thin-film transistors via the interaction of ionized oxygen vacancy redistribution, self-heating effect, and hot carrier …

G Zhu, M Zhang, Z Jiang, J Huang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, device degradation of metal oxide (MO) thin-film transistors (TFTs) under
positive bias stress, linear stress, and saturation stress is systematically investigated. A …

Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

SB Ko, NJ Seong, K Choi, SJ Yoon, SN Choi… - Journal of Materials …, 2019 - pubs.rsc.org
Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic
layer deposition (ALD) were strategically investigated for thin film transistor applications. The …

Role of combustion chemistry in low-temperature deposition of metal oxide thin films from solution

EA Cochran, DH Park, MG Kast, LJ Enman… - Chemistry of …, 2017 - ACS Publications
Metal-oxide thin films find many uses in (opto) electronic and renewable energy
technologies. Their deposition by solution methods aims to reduce manufacturing costs …

Anomalously Low Heat Conduction in Single‐Crystal Superlattice Ceramics Lower Than Randomly Oriented Polycrystals

HJ Cho, Y Wu, YQ Zhang, B Feng… - Advanced Materials …, 2021 - Wiley Online Library
Heat conduction in ceramics is attributed to phonon propagation, which can be strongly
suppressed at boundaries. Usually, polycrystals show lower thermal conductivity (κ) than …

Self-heating stress-induced severe humps in transfer characteristics of amorphous InGaZnO thin-film transistors

H Yang, T Huang, X Zhou, J Li, S Su… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Under a self-heating stress (SHS), amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs)
would exhibit a severe hump in the transfer characteristics. A model based on state …