Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
Overcoming challenges associated with implementation of resistive random access memory
technology for non-volatile information storage requires identifying the material …
technology for non-volatile information storage requires identifying the material …
Structure-evolution-designed amorphous oxides for dielectric energy storage
Y Yu, Q Zhang, Z Xu, W Zheng, J Xu, Z ** and recovery in ALD HfO2/β-Ga2O3 (010) MOS capacitors
The reliability of atomic layer deposited HfO 2 β-Ga 2 O 3 (010) MOS capacitors (MOSCAPs)
was tested using constant voltage stress measurements. The HfO 2/β-Ga 2 O 3 MOSCAPs …
was tested using constant voltage stress measurements. The HfO 2/β-Ga 2 O 3 MOSCAPs …
Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si
Metal-organic decomposed lanthanum cerium oxide (La x Ce y O z) film had been spin-
coated on n-type Si substrate. Effects of post-deposition annealing temperature and time on …
coated on n-type Si substrate. Effects of post-deposition annealing temperature and time on …
Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis
Crystalline phase identification for hafnium-based ferroelectrics by diffraction techniques has
been elusive. We use density-functional-theory (DFT)-assisted extended X-ray absorption …
been elusive. We use density-functional-theory (DFT)-assisted extended X-ray absorption …