Electronic Transport and Quantum Phenomena in Nanowires

G Badawy, EPAM Bakkers - Chemical Reviews, 2024 - ACS Publications
Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

InAs-Al hybrid devices passing the topological gap protocol

M Aghaee, A Akkala, Z Alam, R Ali, A Alcaraz Ramirez… - Physical Review B, 2023 - APS
We present measurements and simulations of semiconductor-superconductor
heterostructure devices that are consistent with the observation of topological …

Progress in superconductor-semiconductor topological Josephson junctions

WF Schiela, P Yu, J Shabani - PRX Quantum, 2024 - APS
Majorana bound states (MBSs) are quasiparticles that are their own antiparticles. They are
predicted to emerge as zero-energy modes localized at the boundary of a topological …

Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas

T Wang, H Song, K He - Quantum Frontiers, 2024 - Springer
This review aims to provide a comprehensive overview of the development and current
understanding of GaAs and InAs heterostructures, with a special emphasis on achieving …

[HTML][HTML] Transport properties of near surface InAs two-dimensional heterostructures

KS Wickramasinghe, W Mayer, J Yuan… - Applied Physics …, 2018 - pubs.aip.org
Two-dimensional electron systems confined to the surface of narrowband semiconductors
have attracted great interest since they can easily integrate with superconductivity (or …

Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems

E Cheah, DZ Haxell, R Schott, P Zeng, E Paysen… - Physical Review …, 2023 - APS
In situ synthesized semiconductor/superconductor hybrid structures became an important
material platform in condensed matter physics. Their development enabled a plethora of …

Mobility exceeding 100 000  s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum

T Zhang, T Lindemann, GC Gardner, S Gronin… - Physical Review …, 2023 - APS
The two-dimensional electron gas residing in shallow InAs quantum wells coupled to
epitaxial aluminum is a widely utilized platform for exploration of topological …

Spin-orbit coupling and electron scattering in high-quality quantum wells

S Metti, C Thomas, D **ao, MJ Manfra - Physical Review B, 2022 - APS
InSb 1− x As x is a promising material system for exploration of topological superconductivity
in hybrid superconductor/semiconductor devices due to its large effective g-factor and …

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

C Thomas, AT Hatke, A Tuaz, R Kallaher, T Wu… - Physical Review …, 2018 - APS
High mobility, strong spin-orbit coupling, and large Landé g factor make the two-dimensional
electron gas (2DEG) in InAs quantum wells grown on nearly lattice-matched GaSb …

[HTML][HTML] Controlling Fermi level pinning in near-surface InAs quantum wells

WM Strickland, M Hatefipour, D Langone… - Applied Physics …, 2022 - pubs.aip.org
Hybrid superconductor–semiconductor heterostructures are a promising platform for
quantum devices based on mesoscopic and topological superconductivity. In these …