In recent years, optical second-harmonic generation has matured into a versatile and
powerful technique for probing the electronic and structural properties of buried solid–solid …

The outstanding properties of SiO2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

Optical second harmonic generation (SHG) of 800 nm, 150 fs fundamental pulses is
observed from exfoliated graphene and multilayer graphitic films mounted on an oxidized …

Intrinsic threshold voltage fluctuations introduced by local oxide thickness variations (OTVs)
in deep submicrometer (decanano) MOSFETs are studied using three-dimensional (3-D) …

We have measured second-harmonic generation (SHG) from graphene and other graphitic
films, from two layers to bulk graphite, at room temperature; all samples are mounted on a …

The thickness of silicon dioxide that is used as the transistor gate dielectric in most
advanced memory and logic applications has decreased below 7 nm. Unfortunately, the …

We report a new spectroscopic technique to measure simultaneously the intensity and the
phase of second-harmonic (SH) radiation over a broad spectral range without laser tuning …

Even‐order non‐linear optical spectroscopy has emerged as an unusually sensitive
technique for non‐invasive analysis of surfaces and buried interfaces of centrosymmetric …

We report an investigation of charge transfer in high-k dielectric stacks on Si by second
harmonic generation (SHG). Ultrathin (2–6 nm) films of HfO 2⁠, ZrO 2⁠, and Al 2 O 3 grown …

The exact structure and properties of the Si| SiO2 interface are very important in
microelectronics and photovoltaic devices such as metal-oxide-semiconductor field-effect …