Time to market is a vital aspect of electronic product development. When it comes to device
technology, the time needed for the device fabrication processes to stabilize is relatively …

All electronic devices when used in a radiation environment undergo significant changes in
their electrical properties. It is interesting to explore the effects of radiation, not only on …

In this paper, a surface potential-based drain current model is developed to explore the
static and quasi-static performance of substrate-biased tri-gate junctionless field-effect …

An integrated design based on Gate-All-Around (GAA) silicon Junctionless (JL) vertical
profile Nanowire (NW) structure has been proposed for JL-NW-Tunnel-Field Effect Transistor …

In this brief, the impact of back gate bias (V gb), on analog performance of silicon on
insulator do**less transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are …

In this work, an extensive study of the aging mechanisms of the p-type do**less JLFET
(DL JLFET) structure is reported for the first time. The negative-bias-temperature-instability …

The performance and reliability enhancement achieved in a conventional double-gate (DG)
junctionless field-effect transistor (JLFET) by introducing a vacuum gate dielectric towards …

Do**less (DLFET) provides better reliability against any physically doped devices. Hence,
this paper aims to provide a fair comparison between conventional junctionless (JLFET) and …

The influence of random dopant fluctuations on the statistical variability of the electrical
characteristics of n-channel silicon junctionless nanowire transistor (JNT) has been studied …

We empirically examine the relationship between software design modularity and software
quality in open source software (OSS) development projects. Conventional wisdom …