This paper summarizes key findings in single-photon generation from deep level defects in
silicon carbide (SiC) and highlights the significance of these individually addressable …

Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic
devices. However, current leakage at the SiC/Si junction at high temperatures and visible …

Individual impurity atoms in silicon can make superb individual qubits, but it remains an
immense challenge to build a multi-qubit processor: there is a basic conflict between …

Inertial navigation on a chip has long been constrained by the noise and stability issues of
micromechanical Coriolis gyroscopes, as silicon, the dominant material for …

Silicon carbide (SiC) is a semiconductor used in quantum information processing,
microelectromechanical systems, photonics, power electronics, and harsh environment …

Low-temperature direct bonding is an effective method for joining two dissimilar materials
into one composite. In this paper, we developed a universal method for fabricating single …

SU-8 micro-cantilever arrays consisting of V-and M-shaped structures fabricated using a
simplified single hard mask step. Bending tests were performed under similar peak loads …

This chapter looks at the role of silicon carbide (SiC) in microsystem technology. It starts with
an introduction into the wide bandgap (WBG) materials and the properties that make them …

Although the monolithic integration of silicon carbide (SiC) Micro-Electro-Mechanical
Systems (MEMS) and SiC electronics is very promising, it is still very challenging due to the …

Low-temperature post oxidation annealing of 4H-SiC at 900 C for 90 min after photoelectric
chemical (PEC) etching in alkaline solution can eliminate the porous structures that form …