In this article, the performance of 3-D nanosheet FET (NS-FET) in inversion (INV) and
junctionless (JL) modes is demonstrated and compared at both device and circuit levels. In …

In this paper, the impact of scaling on the gate all around the nanosheet field effect transistor
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …

The continued downscaling of silicon CMOS technology presents challenges for achieving
the required low power consumption. While high mobility channel materials hold promise for …

In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is
performed. To enhance power performance co-optimization geometry parameters like NS …

In this paper, DC and analog/RF figures of merit (FOMs) for different geometrical variations
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …

Short channel effects (SCEs) along with mobility degradation has a great impact on CMOS
technology below 100 nm. These effects can be overcome by using gate and channel …

The performance of comb-like channel field effect transistor (CombFET) and nanosheet FET
(NSFET) is addressed at both device and circuit levels at the 3-nm node. The CombFET is …

Abstract The Nanosheet Field Effect Transistor (NSFET) has been shown to be a viable
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …

The total ionizing dose (TID) response of SOI-FinFET with linear gate workfunction
modulation is presented and evaluated. The gate metal workfunction is linearly modulated …

By understanding the potential benefits of Gate Stack Dual Material double gate MOSFET
(DG MOSFET), this research aims to contribute to the investigation of its electrical …