Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …

In this review article, we summarize some recent key results in the development of
antiferromagnetic spintronics. Current-induced switching of the Néel vector orientation has …

Antiferromagnetic spintronics have attracted wide attention due to its great potential in
constructing ultradense and ultrafast antiferromagnetic memory that suits modern high …

Spatial, momentum and energy separation of electronic spins in condensed-matter systems
guides the development of new devices in which spin-polarized current is generated and …

Antiferromagnetic spintronics, shows great potential for high-density and ultrafast
information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component …

Ferromagnets are known to support spin-polarized currents that control various spin-
dependent transport phenomena useful for spintronics. On the contrary, fully compensated …

Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

Efficient detection of the magnetic state is a critical step towards useful antiferromagnet-
based spintronic devices. Recently, finite tunneling magnetoresistance (TMR) has been …

Semi-metals present unique transport properties due to their distinctive band structures and
topological properties, leading to an emergence of semi-metal-based electronic …

Spintronics based on ferromagnets has enabled the development of microwave oscillators
and diodes. To achieve even faster operation, antiferromagnets hold great promise despite …