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Prediction of FinFET current-voltage and capacitance-voltage curves using machine learning with autoencoder
In this letter, we demonstrated the possibility of predicting full transistor current-voltage (IV)
and capacitance-voltage (CV) curves using machines trained by Technology Computer …
and capacitance-voltage (CV) curves using machines trained by Technology Computer …
A review on machine learning approaches for predicting the effect of device parameters on performance of nanoscale MOSFETs
R Ghoshhajra, K Biswas… - 2021 Devices for Integrated …, 2021 - ieeexplore.ieee.org
This review investigates the possibility of using Machine Learning as a replacement for
numerical TCAD device simulation. As the chip design is getting complex to incorporate …
numerical TCAD device simulation. As the chip design is getting complex to incorporate …
TCAD-augmented machine learning with and without domain expertise
In this article, using experimental data, we demonstrate that the technology computer-aided
design (TCAD) is a very cost-effective tool to generate the data to build machine learning …
design (TCAD) is a very cost-effective tool to generate the data to build machine learning …
Improvement of TCAD augmented machine learning using autoencoder for semiconductor variation identification and inverse design
A machine learning (ML) model by combing two autoencoders and one linear regression
model is proposed to avoid overfitting and to improve the accuracy of Technology Computer …
model is proposed to avoid overfitting and to improve the accuracy of Technology Computer …
TCAD-machine learning framework for device variation and operating temperature analysis with experimental demonstration
This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-
ML) framework to assist the analysis of device-to-device variation and operating (ambient) …
ML) framework to assist the analysis of device-to-device variation and operating (ambient) …
A machine learning approach to modeling intrinsic parameter fluctuation of gate-all-around Si nanosheet MOSFETs
The sensitivity of semiconductor devices to any microscopic perturbation is increasing with
the continuous shrinking of device technology. Even the small fluctuations have become …
the continuous shrinking of device technology. Even the small fluctuations have become …
Application of noise to avoid overfitting in TCAD augmented machine learning
In this paper, we propose and study the use of noise to avoid the overfitting issue in
Technology Computer-Aided Design-augmented machine learning (TCAD-ML). TCAD-ML …
Technology Computer-Aided Design-augmented machine learning (TCAD-ML). TCAD-ML …
A machine learning approach for optimizing and accurate prediction of performance parameters for stacked nanosheet transistor
In this article, the possibilities of accurate prediction of wide range of parameters and
optimizing the same through machine learning (ML) approach have been demonstrated for …
optimizing the same through machine learning (ML) approach have been demonstrated for …
Automatic selection of structure parameters of silicon on insulator lateral power device using Bayesian optimization
The selection of design structure parameters is a critical step for meeting the performance
requirement for silicon on insulator (SOI) lateral power devices, especially when multiple …
requirement for silicon on insulator (SOI) lateral power devices, especially when multiple …
Real-time TCAD: A new paradigm for TCAD in the artificial intelligence era
This paper presents a novel approach to enable real-time device simulation and
optimization. State-of-the-art algorithms which can describe semiconductor domain are …
optimization. State-of-the-art algorithms which can describe semiconductor domain are …