Prediction of FinFET current-voltage and capacitance-voltage curves using machine learning with autoencoder

K Mehta, HY Wong - IEEE Electron Device Letters, 2020 - ieeexplore.ieee.org
In this letter, we demonstrated the possibility of predicting full transistor current-voltage (IV)
and capacitance-voltage (CV) curves using machines trained by Technology Computer …

A review on machine learning approaches for predicting the effect of device parameters on performance of nanoscale MOSFETs

R Ghoshhajra, K Biswas… - 2021 Devices for Integrated …, 2021 - ieeexplore.ieee.org
This review investigates the possibility of using Machine Learning as a replacement for
numerical TCAD device simulation. As the chip design is getting complex to incorporate …

TCAD-augmented machine learning with and without domain expertise

H Dhillon, K Mehta, M **ao, B Wang… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, using experimental data, we demonstrate that the technology computer-aided
design (TCAD) is a very cost-effective tool to generate the data to build machine learning …

Improvement of TCAD augmented machine learning using autoencoder for semiconductor variation identification and inverse design

K Mehta, SS Raju, M **ao, B Wang, Y Zhang… - IEEE …, 2020 - ieeexplore.ieee.org
A machine learning (ML) model by combing two autoencoders and one linear regression
model is proposed to avoid overfitting and to improve the accuracy of Technology Computer …

TCAD-machine learning framework for device variation and operating temperature analysis with experimental demonstration

HY Wong, M **ao, B Wang, YK Chiu… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-
ML) framework to assist the analysis of device-to-device variation and operating (ambient) …

A machine learning approach to modeling intrinsic parameter fluctuation of gate-all-around Si nanosheet MOSFETs

R Butola, Y Li, SR Kola - IEEE Access, 2022 - ieeexplore.ieee.org
The sensitivity of semiconductor devices to any microscopic perturbation is increasing with
the continuous shrinking of device technology. Even the small fluctuations have become …

Application of noise to avoid overfitting in TCAD augmented machine learning

SS Raju, B Wang, K Mehta, M **ao… - … on Simulation of …, 2020 - ieeexplore.ieee.org
In this paper, we propose and study the use of noise to avoid the overfitting issue in
Technology Computer-Aided Design-augmented machine learning (TCAD-ML). TCAD-ML …

A machine learning approach for optimizing and accurate prediction of performance parameters for stacked nanosheet transistor

N Kumar, V Rajakumari, RP Padhy, S Routray… - Physica …, 2024 - iopscience.iop.org
In this article, the possibilities of accurate prediction of wide range of parameters and
optimizing the same through machine learning (ML) approach have been demonstrated for …

Automatic selection of structure parameters of silicon on insulator lateral power device using Bayesian optimization

J Chen, MB Alawieh, Y Lin, M Zhang… - IEEE Electron …, 2020 - ieeexplore.ieee.org
The selection of design structure parameters is a critical step for meeting the performance
requirement for silicon on insulator (SOI) lateral power devices, especially when multiple …

Real-time TCAD: A new paradigm for TCAD in the artificial intelligence era

S Myung, J Kim, Y Jeon, W Jang, I Huh… - … on Simulation of …, 2020 - ieeexplore.ieee.org
This paper presents a novel approach to enable real-time device simulation and
optimization. State-of-the-art algorithms which can describe semiconductor domain are …