Accurate UV light detection is a crucial component in modern optoelectronic technologies.
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …

Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …

High‐quality imaging units are indispensable in modern optoelectronic systems for accurate
recognition and processing of optical information. To fulfill massive and complex imaging …

The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …

Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …

Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …

Circuits based on organic electrochemical transistors (OECTs) have great potential in the
fields of biosensors and artificial neural computation due to their biocompatibility and neural …

Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in
photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is …