22FDSOI device towards RF and mmWave applications
This paper presents 22FDSOI device RF performance figure of merit dependencies on the
design parameters, such as gate length, width per finger, number of fingers, centerline poly …
design parameters, such as gate length, width per finger, number of fingers, centerline poly …
Empirical large-signal modeling of 22-nm FDSOI CMOS transistors in RF/mm-Wave range
QH Le - 2024 - opus4.kobv.de
In recent years, the deployment of the 5th generation (5G) telecommunications network has
fuelled growing interest in low-power and low-cost wireless transceivers in the radio …
fuelled growing interest in low-power and low-cost wireless transceivers in the radio …
Strain Map** in Conventional Finfet and in Novel Cfet Devices Architecture by Bessel Electron Diffraction Method
Strain engineering is a common approach for enhancing the mobility of semiconductor
materials and improving the performance of conventional and novel transistors …
materials and improving the performance of conventional and novel transistors …