This review compares the mechanical and thermal-electrical properties of sintered copper
(Cu) with sintered silver (Ag) as bonding materials in the microelectronics joint applications …

Semiconductor packaging materials play a critical role in the development of semiconductor
devices. They not only provide reliable protection and support, but also contribute to the …

Despite the rapid progression of silicon carbide (SiC) power devices, the thermal
characteristic evaluation during power cycling at high temperature (> 200° C) is an issue. In …

CuFe 2 O 4 particles were synthesized using the sol-gel self-combustion method and
characterized for their compositional surface morphology and crystal structure. When …

During the sintering process, a three-dimensional network-like porous structure forms as the
consequences of atom diffusion and neck formation among silver particles. In this paper, two …

Diamond has the highest thermal conductivity among naturally occurring materials and a
relatively low coefficient of thermal expansion (CTE), making it a promising interconnected …

The rapid development of the third-generation semiconductors has posed new requirements
and challenges for power electronic packaging. In recent years, the utilization of nano-Ag …

This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power
module packaging with optimized electrical and thermal performances. The structure of the …

Copper (Cu) particle sintering is widely regarded as one of the most ideal interconnect
technologies for wide band gap semiconductors owing to its potential for low-temperature …

In this study, the thermal characteristics and structure reliability during power cycling for the
four types of SiC power module fabricated using a SiC-heater chip, direct bonded aluminum …