Oxide materials are one of the most advanced key technology in the thin film transistors
(TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) …

In this study we investigated, theoretically and experimentally, the unique photoactive
behavior of pristine and defected indium oxide surfaces providing fundamental insights into …

The addition of suitable metallic dopants into the indium or zinc oxide matrix is essential to
obtain transparent conducting oxide (TCO) thin films for high-performance optoelectronics …

Ab initio simulations and calculations were used to study the structures and stabilities of
copper oxide clusters, Cu n O n (n= 1− 8). The lowest energy structures of neutral and …

The crystallisation of sputter-deposited, amorphous In2O3: H films was investigated. The
influence of deposition and crystallisation parameters onto crystallinity and electron hall …

Even though Ga 2 O 3 and In 2 O 3 are broadly used as semi-conductors, thermodynamic
data for their vaporisation reactions exhibit a large spread. Therefore, the vaporisation …

Doped ZnO thin films have attracted much attention in the research community as front‐
contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in …

In the present study, an efficient method for waste ITO target recycling producing In-Sn alloy
has been proposed based on molten salt electrochemistry. The thermodynamic analysis …

A thermodynamically stable series of superlattices,(ZnO) k In 2 O 3, form in the ZnO-In 2 O 3
binary oxide system for InO 1.5 concentrations from about 13 up to about 33 mole percent …

We studied the structures and electronic properties of copper oxide clusters, Cu3O n (n= 1–
6), using ab initio Monte Carlo simulations and density functional theory calculations. All …