A comprehensive one-volume reference on current JLFET methods, techniques, and
research Advancements in transistor technology have driven the modern smart-device …

In this work, a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET)
with raised source and drain (RSD) regions is utilized for application of one-transistor (1T) …

The design of a ferroelectric-based biosensor for detecting various biomolecules like
proteins and DNA has captivated the interest of researchers in early disease diagnostics …

This paper presents the design and analysis of a vertical do**less double gate
junctionless field-effect transistor (VDL-DG-JLFET) on a silicon-on-insulator (SOI) substrate …

An analytical drain current model for double gate junctionless accumulation mode negative
capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the …

In this paper a new configuration for do**less transistor is presented for preventing the off-
state tunneling from channel to drain. In this work, workfunction engineering has been …

In this article, new structures are proposed with an extra electrode for accumulation-mode
vertical double-diffused metal-oxide semiconductor (VDMOS)(EA VDMOS) and a gate …

Junctionless transistors (JLT) are a promising alternative to address the stringent junction
requirements in conventional transistors. However, JLTs are plagued by high OFF-state …

This survey based on the various device modelling characteristics assists with various
machine learning algorithms. Device modelling is a crucial task in the field of electronics and …

Recently, the do**‐less tunnel FET has gained popularity due to its lower process
complexity than conventional TFETs with heavily doped source and drain regions. In this …