Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
We compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to
silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …
silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …
Dual-functional light-emitting and photo-detecting GaAsPN heterostructures on silicon
Progress in monolithic integration of III-V semiconductor heterostructures on silicon
promotes the development of silicon-based integrated optoelectronics. Here, we report on …
promotes the development of silicon-based integrated optoelectronics. Here, we report on …
Effective suppression of antiphase domains in GaP (N)/GaP heterostructures on Si (001)
III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen
concentration up to 2.12% were grown on Si (001) by plasma assisted molecular beam …
concentration up to 2.12% were grown on Si (001) by plasma assisted molecular beam …
Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells
The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by
means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) …
means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) …
Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys
The electronic band structure of phosphorus-rich GaNxPyAs1− x− y alloys (x~ 0.025 and y≥
0.6) is studied experimentally using optical absorption, photomodulated transmission …
0.6) is studied experimentally using optical absorption, photomodulated transmission …
Nitrogen–phosphorus competition in the molecular beam epitaxy of GaPN
In this work, we study the nitrogen–phosphorus competition during the molecular beam
epitaxial growth of GaPN alloy with N content ranging from 0 to 6%. N 2 decomposition in …
epitaxial growth of GaPN alloy with N content ranging from 0 to 6%. N 2 decomposition in …
Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs
GaN x P 1-x and GaN x P 1-xy As y highly mismatched alloys (x≤ 0.025 and y≤ 0.4),
promising candidates for intermediate band solar cell applications, were studied by optical …
promising candidates for intermediate band solar cell applications, were studied by optical …
Impact of temperature and nitrogen composition on the growth of GaAsPN alloys
K Yamane, S Mugikura, S Tanaka, M Goto… - Journal of Crystal …, 2018 - Elsevier
This paper presents the impact of temperature and nitrogen-composition on the growth
mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results …
mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results …
Improvement of carriers diffusion length and mobility in annealed GaAsPN materials for intermediate band solar cells
In this paper, we investigate the effect of thermal annealing on nonradiative recombination
parameters of GaAsPN materials used for intermediate band solar cells. This study is …
parameters of GaAsPN materials used for intermediate band solar cells. This study is …
Radiative and nonradiative recombination processes in GaNP (As) alloys
Abstract Recombination processes in GaNP (As) alloys were studied by an analysis of
photoluminescence spectra in wide temperature and excitation power ranges. Temperature …
photoluminescence spectra in wide temperature and excitation power ranges. Temperature …