Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Radiation effects in SiGe technology
JD Cressler - IEEE transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
High gamma ray tolerance for 4H-SiC bipolar circuits
A high gamma radiation hardness of 4H-SiC circuits is performed. The OR NOR circuits are
based on emitter coupled logic (ECL), using integrated bipolar NPN transistors. Gain …
based on emitter coupled logic (ECL), using integrated bipolar NPN transistors. Gain …
Novel sensors for particle tracking: a contribution to the Snowmass community planning exercise of 2021
Five contemporary technologies are discussed in the context of their potential roles in
particle tracking for future high energy physics applications. These include sensors of the 3D …
particle tracking for future high energy physics applications. These include sensors of the 3D …
Synergistic effect of ionization and displacement defects in NPN transistors induced by 40-MeV Si ion irradiation with low fluence
Based on 3DG110 transistors and special gated NPN (GNPN) transistors, the characteristic
of the synergistic effect between ionization and displacement defects induced by 40-MeV …
of the synergistic effect between ionization and displacement defects induced by 40-MeV …
Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs
We have investigated the effects of 50MeV lithium ion irradiation on the DC electrical
characteristics of first-generation silicon–germanium heterojunction bipolar transistors …
characteristics of first-generation silicon–germanium heterojunction bipolar transistors …
Ionization damage in NPN transistors caused by lower energy electrons
Electrical degradation of two type NPN bipolar junction transistors (BJTs) with different
emitter sizes was examined under exposures of 70 and 110keV electrons. Base and …
emitter sizes was examined under exposures of 70 and 110keV electrons. Base and …
Evolution of deep level centers in NPN transistors following 35 MeV Si ion irradiations with high fluence
The properties of deep level centers have been researched on the base-collector junctions
of 3DG110 silicon NPN bipolar junction transistors (BJTs) irradiated by 35 MeV silicon (Si) …
of 3DG110 silicon NPN bipolar junction transistors (BJTs) irradiated by 35 MeV silicon (Si) …
Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments
Third generation 200GHz silicon–germanium Heterojunction Bipolar Transistors (Si–Ge
HBTs) were irradiated with high dose Co-60 gamma radiation up to 100Mrad. Pre-radiation …
HBTs) were irradiated with high dose Co-60 gamma radiation up to 100Mrad. Pre-radiation …
A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs
N-channel MOSFETs were irradiated by 48MeV Li3+ ions, 100MeV F8+ ions and Co-60
gamma radiation with doses ranging from 100krad to 100Mrad. The threshold voltage (VTH) …
gamma radiation with doses ranging from 100krad to 100Mrad. The threshold voltage (VTH) …
Performance of the SiGe HBT 8HP and 8WL technologies after high dose/fluence radiation exposure
JS Rice, M Ullan, G Brooijmans… - 2008 IEEE Nuclear …, 2008 - ieeexplore.ieee.org
An assessment of the radiation tolerance of the latest generation IBM silicon-germanium
(SiGe) heterojunction bipolar transistor (HBT) technologies (SiGe 8WL and SiGe 8HP) at …
(SiGe) heterojunction bipolar transistor (HBT) technologies (SiGe 8WL and SiGe 8HP) at …