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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge (Sn) materials for micro-and nanophotonics
We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0. 92Sn0.
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …
Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content
GeSn alloys are the subject of intense research activities as these group IV semiconductors
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge1–xSnx): A Novel Route for Ge1–xSnx Nanostructure Fabrication
We present a new etch chemistry that enables highly selective dry etching of germanium
over its alloy with tin (Ge1–x Sn x). We address the challenges in synthesis of high-quality …
over its alloy with tin (Ge1–x Sn x). We address the challenges in synthesis of high-quality …
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
The GeSn direct gap material system, with Si complementary-metal-oxide semiconductor
(CMOS) compatibility, presents a promising solution for direct incorporation of focal plane …
(CMOS) compatibility, presents a promising solution for direct incorporation of focal plane …
Nanocrystalline Group IV Alloy Semiconductors: Synthesis and Characterization of Ge1–xSnx Quantum Dots for Tunable Bandgaps
Ge1–x Sn x alloys are among a small class of benign semiconductors with composition
tunable bandgaps in the near-infrared (NIR) spectrum. As the amount of Sn is increased, the …
tunable bandgaps in the near-infrared (NIR) spectrum. As the amount of Sn is increased, the …
Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications
High-quality compressive-strained Ge 1− x Sn x/Ge films have been deposited on Si (001)
substrate using a mainstream commercial chemical vapor deposition reactor. The growth …
substrate using a mainstream commercial chemical vapor deposition reactor. The growth …
Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering
In this work, epitaxy of GeSn with high-Sn content of 16.5% on Ge substrate by sputtering at
a relative high temperature of 259° C is reported. The strain relaxation in constant-Sn …
a relative high temperature of 259° C is reported. The strain relaxation in constant-Sn …
Colloidal tin–germanium nanorods and their Li-ion storage properties
We report a facile colloidal synthesis of tin–germanium (Sn–Ge) heterostructures in the form
of nanorods with a small aspect ratio of 1.5–3 and a length smaller than 50 nm. In the two …
of nanorods with a small aspect ratio of 1.5–3 and a length smaller than 50 nm. In the two …
Epitaxial growth of Ge1-xSnx on c–Plane sapphire substrate by molecular beam epitaxy
In this paper, we have demonstrated the first epitaxial growth of Ge 1-x Sn x on c–plane
Sapphire. This has been achieved by growing Ge 1-x Sn x on Ge (1 1 1)/AlAs/Al 2 O 3 (0 0 0 …
Sapphire. This has been achieved by growing Ge 1-x Sn x on Ge (1 1 1)/AlAs/Al 2 O 3 (0 0 0 …