Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …
since it is strongly desired in various high-efficiency applications ranging from …
[BOOK][B] Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
S Irvine, P Capper - 2019 - books.google.com
Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
We compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to
silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …
silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster
We report on the association of Ultra High Vaccum Chemical Vapor Deposition (UHVCVD)
and Molecular Beam Epitaxy (MBE) to achieve III–V (GaP) integration on Si/Si (100) …
and Molecular Beam Epitaxy (MBE) to achieve III–V (GaP) integration on Si/Si (100) …
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots
We study in detail self-assembled (In, Ga) As quantum dots grown on GaP substrate from the
structural, theoretical, and optical points of view. Single quantum dot morphology is first …
structural, theoretical, and optical points of view. Single quantum dot morphology is first …
Quantitative imaging of anti-phase domains by polarity sensitive orientation map** using electron backscatter diffraction
Advanced structural characterisation techniques which are rapid to use, non-destructive and
structurally definitive on the nanoscale are in demand, especially for a detailed …
structurally definitive on the nanoscale are in demand, especially for a detailed …
Dissolution of antiphase domain boundaries in GaAs on Si (001) via post-growth annealing
CSC Barrett, A Atassi, EL Kennon, Z Weinrich… - Journal of Materials …, 2019 - Springer
GaAs-on-Si epitaxial crystal quality has historically been limited by a number of growth-
related defects. In particular, antiphase domain boundaries (APBs) can nucleate at the …
related defects. In particular, antiphase domain boundaries (APBs) can nucleate at the …
Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon
We report a structural study of molecular beam epitaxy-grown lattice-matched GaP/Si (0 0 1)
thin layers with an emphasis on the interfacial structural properties, and optical studies of …
thin layers with an emphasis on the interfacial structural properties, and optical studies of …
Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
This letter deals with the electroluminescence emission at room temperature of two light-
emitting diodes on GaP substrate, based on ternary GaAsP/GaP and quaternary …
emitting diodes on GaP substrate, based on ternary GaAsP/GaP and quaternary …
Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering
We have investigated quantitatively anti-phase domains (APD) structural properties in 20nm
GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive …
GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive …