High‐power blue and violet light‐emitting diodes (LEDs) based on III–V nitrides were grown
by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the …

We explore by simulation ways in which an array of quantum dot molecules could serve as a
quantum neural computer. First, we show that a single quantum dot molecule evolving in …

Nonstoichiometric GaAs obtained by implantation with 2 MeV arsenic ions at 1015 cm− 2
dose is studied. As‐implanted samples show a< 200 fs lifetime of photocarriers and low …

The present study reports on the phase formation, spectral, surface, and luminescence
properties of the yellowish-white emitting Ba 2 Mg (BO 3) 2: Dy 3+ phosphors synthesized by …

We have investigated photoexcited carrier lifetimes in arsenic‐ion‐implanted semi‐
insulating GaAs by time‐resolved reflectivity measurements. Subpicosecond carrier lifetimes …

We have used transmission electron microscopy to determine the morphology of InP
Stranski–Krastanow islands in GaInP, grown by metalorganic chemical vapor deposition at …

The minimum epitaxial layer thickness required to produce relaxed, thermally stable, Si0.
7Ge0. 3 buffer layer structures for high electron‐and hole‐mobility devices has been …

We report on efficient frequency upconversion in Er3+‐doped fluoroindate glasses. The
process is observed under 1.48 μm laser diode excitation and results in the generation of …

Picosecond photoresponse of carriers in Si ion‐implanted Si samples has been measured
using femtosecond transient reflectivity measurement. A threshold peak implant dose of …

Magnetron enhanced reactive ion etching of SiC has been investigated in SF6 plasmas.
Etch rate was determined as a function of cathode power density (0.1–0.5 W/cm2), pressure …