Nanowire electronics: from nanoscale to macroscale

C Jia, Z Lin, Y Huang, X Duan - Chemical reviews, 2019 - ACS Publications
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Silicon nanowires synthesis by metal-assisted chemical etching: A review

AA Leonardi, MJL Faro, A Irrera - Nanomaterials, 2021 - mdpi.com
Silicon is the undisputed leader for microelectronics among all the industrial materials and
Si nanostructures flourish as natural candidates for tomorrow's technologies due to the rising …

Silicon–germanium nanowires: chemistry and physics in play, from basic principles to advanced applications

M Amato, M Palummo, R Rurali, S Ossicini - Chemical reviews, 2014 - ACS Publications
The trend predicted by Moore's law sets forth strict requirements on the electronic properties
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …

[PDF][PDF] FARO

E LEONARDO - 2018 - cdn.contemporaryartlibrary.org
12.10.2018 30.11.2018 ENGEL LEONARDO FARO Page 1 Kunsthalle Lissabon presents
Faro, the first solo show in Portugal by Engel Leonardo (Bani, Dominican Republic, 1977, lives …

SARS‐CoV‐2 and omicron variant detection with a high selectivity, sensitivity, and low‐cost silicon bio‐nanosensor

AA Leonardi, EL Sciuto, MJ Lo Faro, B Fazio… - Nano …, 2023 - Wiley Online Library
The recent SARS‐CoV‐2 pandemic has highlighted the urgent need for novel point‐of‐care
devices to be promptly used for a rapid and reliable large screening analysis of several …

Band-offset driven efficiency of the do** of SiGe core− shell nanowires

M Amato, S Ossicini, R Rurali - Nano letters, 2011 - ACS Publications
Impurity do** of semiconducting nanowires has been predicted to become increasingly
inefficient as the wire diameter is reduced, because impurity states get deeper due to …

SiGe nanowires: Structural stability, quantum confinement, and electronic properties

M Amato, M Palummo, S Ossicini - Physical Review B—Condensed Matter and …, 2009 - APS
We report first-principles calculations of [110] SiGe NWs; we discuss the effect of geometry
and composition on their thermodynamic stability, on their electronic properties, and on the …

Fluorescent biosensors based on silicon nanowires

AA Leonardi, MJ Lo Faro, B Fazio, C Spinella… - Nanomaterials, 2021 - mdpi.com
Nanostructures are arising as novel biosensing platforms promising to surpass current
performance in terms of sensitivity, selectivity, and affordability of standard approaches …

Vertically integrated silicon-germanium nanowire field-effect transistor

G Rosaz, B Salem, N Pauc, A Potié, P Gentile… - Applied Physics …, 2011 - pubs.aip.org
We demonstrate in this paper the possibility to vertically integrate SiGe nanowires in order to
use them as vertical channel for field-effect transistors (FETs). We report a threshold voltage …

Extrinsic do** in group iv hexagonal-diamond-type crystals

M Amato, T Kaewmaraya, A Zobelli - The Journal of Physical …, 2020 - ACS Publications
Over the past few years, group IV hexagonal-diamond-type crystals have acquired a lot of
attention in semiconductor physics thanks to the appearance of novel and very effective …