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Digital alloy-grown InAs/GaAs short-period superlattices with tunable band gaps for short-wavelength infrared photodetection
The InGaAs lattice-matched to InP has been widely deployed as the absorption material in
short-wavelength infrared photodetection applications such as imaging and optical …
short-wavelength infrared photodetection applications such as imaging and optical …
Atomistic Transport Modeling, Design Principles, and Empirical Rules for Low-Noise III-V Digital-Alloy Avalanche Photodiodes
A series of III-V ternary and quarternary digital alloy avalanche photodiodes have recently
been seen to exhibit very low excess noise. Using band inversion of an environment …
been seen to exhibit very low excess noise. Using band inversion of an environment …
A physics based multiscale compact model of pin avalanche photodiodes
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to
exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any …
exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any …
Minimum-energy digital computing with steep subthreshold swing tunnel FETs
Energy efficiency in digital circuits is limited by the subthreshold swing (SS), which defines
how abruptly a transistor switches between its ON and OFF-states. The SS is particularly …
how abruptly a transistor switches between its ON and OFF-states. The SS is particularly …
A comprehensive analysis of Auger generation impacted planar Tunnel FETs
Abstract Tunnel Field Effect Transistors (TFETs) are known to be compromised by higher
order processes that downgrade their performance compared to ballistic projections. Using …
order processes that downgrade their performance compared to ballistic projections. Using …
Biaxial strain modulated valence-band engineering in III-V digital alloys
A series of III-V digital alloy avalanche photodiodes have been recently seen to exhibit very
low excess noise. These alloys have low hole ionization coefficients due to enhanced …
low excess noise. These alloys have low hole ionization coefficients due to enhanced …
A More Accurate Analytical DC Compact Modeling of Tunneling Field-Effect Transistor for SPICE Simulation
In this work, an analytical DC compact model of tunneling field-effect transistor (TFET) with
higher accuracy is presented. Non-local band-to-band tunneling current equation in the …
higher accuracy is presented. Non-local band-to-band tunneling current equation in the …
Drain current modelling of planar TFETs
Abstract Tunnel Field Effect Transistors are one of the most promising ultra-low power steep
slope device. Extremely low OFF current, sub-threshold swing which is less than …
slope device. Extremely low OFF current, sub-threshold swing which is less than …