A key efficiency-limiting factor in silicon-based photovoltaic (PV) devices is the quality of the
silicon material itself. With evolving cell architectures that better address other efficiency-loss …

Herein, a systematic study of the electronic quality of gallium‐doped p‐type silicon wafers
from Czochralski‐grown ingots with melt recharging is presented. It is found that in the as …

In situ and operando measurement techniques combined with nanoscale resolution have
proven invaluable in multiple fields of study. We argue that evaluating device performance …

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl 3
source, is widely used as a dopant source in the manufacturing of crystalline silicon solar …

A phosphorus diffusion gettering model is used to examine the efficacy of a standard
gettering process on interstitial and precipitated iron in multicrystalline silicon. The model …

The quantification of X-ray fluorescence (XRF) microscopy maps by fitting the raw spectra to
a known standard is crucial for evaluating chemical composition and elemental distribution …

The efficacy of higher-temperature gettering processes in reducing precipitated iron
concentrations is assessed by synchrotron-based micro-X-ray fluorescence. By measuring …

This review demonstrates advances in XRF instrumentation, techniques and data
processing algorithms published during the last year. Pixellated detectors and EDXRF …

Iron‐related defects are deleterious in silicon‐based integrated circuits and photovoltaics,
ruining devices and acting as strong recombination centres. Unless great care is taken, iron …

Experiments have been conducted to understand the behaviour of iron in silicon containing
oxide precipitates and associated defects (dislocations and stacking faults), which is …