Ferroelectric Domain Structures in Low‐Strain BaTiO3

AS Everhardt, S Matzen, N Domingo… - Advanced electronic …, 2016 - Wiley Online Library
Epitaxial strain in ferroelectric films offers the possibility to enhance the piezoelectric
performance utilizing low crystal symmetries and high density of domain walls. Ferroelectric …

Film thickness versus misfit strain phase diagrams for epitaxial ultrathin ferroelectric films

QY Qiu, V Nagarajan, SP Alpay - Physical Review B—Condensed Matter and …, 2008 - APS
We present a full scale nonlinear thermodynamic model based on a Landau-Ginzburg-
Devonshire formalism and the theory of dense polydomain structures in a multiparameter …

Epitaxial growth of MgO nanowires by pulsed laser deposition

K Nagashima, T Yanagida, H Tanaka… - Journal of applied …, 2007 - pubs.aip.org
We fabricated single-crystalline MgO nanowires epitaxially grown on MgO single crystal
substrate using the Au catalyst-assisted pulsed laser deposition (PLD). Controlling …

Misfit strain phase diagrams of epitaxial PMN–PT films

N Khakpash, H Khassaf, GA Rossetti… - Applied Physics …, 2015 - pubs.aip.org
Misfit strain–temperature phase diagrams of three compositions of (001) pseudocubic (1− x)·
Pb (Mg l/3 Nb 2/3) O 3− x· PbTiO 3 (PMN–PT) thin films are computed using a …

[HTML][HTML] Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

H Wu, X Ma, Z Zhang, J Zeng, J Wang, G Chai - AIP Advances, 2016 - pubs.aip.org
The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric
properties of epitaxial BaTiO 3 thin films has been investigated using an expanded …

Growth of V2O3 thin films on a-plane (110) and c-plane (001) sapphire via pulsed-laser deposition

BS Allimi, SP Alpay, D Goberman, T Huang… - Journal of Materials …, 2007 - Springer
We report the direct deposition of epitaxial 215-nm-thick vanadium sesquioxide (V 2 O 3)
films on a-and c-plane sapphire substrates from powder-pressed V 2 O 3 targets via pulsed …

Ab initio phase diagram of BaTiO3 under epitaxial strain revisited

A Grünebohm, M Marathe, C Ederer - Applied Physics Letters, 2015 - pubs.aip.org
We revisit the phase diagram of BaTiO 3 under biaxial strain using a first principles-based
effective Hamiltonian approach. We show that, in addition to the tetragonal (c), quasi …

Polarization rotation in by isovalent do** at the fluorite sublattice

K Co, FC Sun, SP Alpay, SK Nayak - Physical Review B, 2019 - APS
Bismuth titanate, Bi 4 Ti 3 O 12 (BiT), is a complex layered ferroelectric material that is
composed of three perovskitelike units and one fluoritelike unit stacked alternatively along …

Investigating the effect of oxygen vacancy on the dielectric and electromechanical properties in ferroelectric ceramics

V Lo, WW Chung, H Cao, X Dai - Journal of applied physics, 2008 - pubs.aip.org
The effect of oxygen vacancy on the dielectric and electromechanical properties in lead
titanate zirconate based ferroelectric ceramics is discussed in this paper. The presence of …

Crystallographic and dielectric properties of highly oriented BaTiO3 films: Influence of oxygen pressure utilized during pulsed laser deposition

J Hiltunen, D Seneviratne, HL Tuller… - Journal of …, 2009 - Springer
The crystal structure of BaTiO 3 thin films grown by pulsed laser deposition on MgO
substrates was found to be strongly influenced by the oxygen pressure used during growth …