Ferroelectric Domain Structures in Low‐Strain BaTiO3
AS Everhardt, S Matzen, N Domingo… - Advanced electronic …, 2016 - Wiley Online Library
Epitaxial strain in ferroelectric films offers the possibility to enhance the piezoelectric
performance utilizing low crystal symmetries and high density of domain walls. Ferroelectric …
performance utilizing low crystal symmetries and high density of domain walls. Ferroelectric …
Film thickness versus misfit strain phase diagrams for epitaxial ultrathin ferroelectric films
We present a full scale nonlinear thermodynamic model based on a Landau-Ginzburg-
Devonshire formalism and the theory of dense polydomain structures in a multiparameter …
Devonshire formalism and the theory of dense polydomain structures in a multiparameter …
Epitaxial growth of MgO nanowires by pulsed laser deposition
K Nagashima, T Yanagida, H Tanaka… - Journal of applied …, 2007 - pubs.aip.org
We fabricated single-crystalline MgO nanowires epitaxially grown on MgO single crystal
substrate using the Au catalyst-assisted pulsed laser deposition (PLD). Controlling …
substrate using the Au catalyst-assisted pulsed laser deposition (PLD). Controlling …
Misfit strain phase diagrams of epitaxial PMN–PT films
N Khakpash, H Khassaf, GA Rossetti… - Applied Physics …, 2015 - pubs.aip.org
Misfit strain–temperature phase diagrams of three compositions of (001) pseudocubic (1− x)·
Pb (Mg l/3 Nb 2/3) O 3− x· PbTiO 3 (PMN–PT) thin films are computed using a …
Pb (Mg l/3 Nb 2/3) O 3− x· PbTiO 3 (PMN–PT) thin films are computed using a …
[HTML][HTML] Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films
The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric
properties of epitaxial BaTiO 3 thin films has been investigated using an expanded …
properties of epitaxial BaTiO 3 thin films has been investigated using an expanded …
Growth of V2O3 thin films on a-plane (110) and c-plane (001) sapphire via pulsed-laser deposition
BS Allimi, SP Alpay, D Goberman, T Huang… - Journal of Materials …, 2007 - Springer
We report the direct deposition of epitaxial 215-nm-thick vanadium sesquioxide (V 2 O 3)
films on a-and c-plane sapphire substrates from powder-pressed V 2 O 3 targets via pulsed …
films on a-and c-plane sapphire substrates from powder-pressed V 2 O 3 targets via pulsed …
Ab initio phase diagram of BaTiO3 under epitaxial strain revisited
We revisit the phase diagram of BaTiO 3 under biaxial strain using a first principles-based
effective Hamiltonian approach. We show that, in addition to the tetragonal (c), quasi …
effective Hamiltonian approach. We show that, in addition to the tetragonal (c), quasi …
Polarization rotation in by isovalent do** at the fluorite sublattice
Bismuth titanate, Bi 4 Ti 3 O 12 (BiT), is a complex layered ferroelectric material that is
composed of three perovskitelike units and one fluoritelike unit stacked alternatively along …
composed of three perovskitelike units and one fluoritelike unit stacked alternatively along …
Investigating the effect of oxygen vacancy on the dielectric and electromechanical properties in ferroelectric ceramics
V Lo, WW Chung, H Cao, X Dai - Journal of applied physics, 2008 - pubs.aip.org
The effect of oxygen vacancy on the dielectric and electromechanical properties in lead
titanate zirconate based ferroelectric ceramics is discussed in this paper. The presence of …
titanate zirconate based ferroelectric ceramics is discussed in this paper. The presence of …
Crystallographic and dielectric properties of highly oriented BaTiO3 films: Influence of oxygen pressure utilized during pulsed laser deposition
J Hiltunen, D Seneviratne, HL Tuller… - Journal of …, 2009 - Springer
The crystal structure of BaTiO 3 thin films grown by pulsed laser deposition on MgO
substrates was found to be strongly influenced by the oxygen pressure used during growth …
substrates was found to be strongly influenced by the oxygen pressure used during growth …