Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Defect engineering involves manipulating the type, concentration, spatial distribution, or
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …

The diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony
in germanium was studied by means of isotopically controlled multilayer structures doped …

The continuous miniaturization in the semiconductor industry brings electronic devices with
higher performance at lower cost. The do** of semiconductor materials plays a crucial role …

This work has a focus on NiSi as a possible metallic contact for aggressively scaled
complementary metal oxide semiconductor devices. As the bulk work function of NiSi lies …

H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating
or switching and having potential barriers; Capacitors or resistors having potential barriers …

We present for the first time an extensive experimental study of the statistical variability of the
drain current (ID) in 6nm thin undoped Silicon-On-Insulator (SOI) MOSFETs. ID variations (σ …

6,667,200 B2 12/2003 Sohn et al. 6,812,157 B1 1 1/2004 Gadgil 7,023,068 B1* 4/2006
Hopper et al................. 257/510 7,045.407 B2* 5/2006 Keating et al................. 438,198 …

In this work, the effects of carbon pre-silicidation implant into Si (1 0 0) substrate on NiSi
were investigated. NiSi films with carbon pre-silicidation implant to different doses were …

The effects of carbon in heavily phosphorus-doped Czochralski (HP-Cz) silicon (Si)
substrates, with the concentrations across an order of magnitude from 10 16 to 10 17 cm− 3 …