Three-dimensional NOR array including vertical word lines and discrete memory elements and methods of manufacture
A three-dimensional memory device includes an alternating stack of source layers and drain
layers located over a substrate, a memory opening vertically extending through the …
layers located over a substrate, a memory opening vertically extending through the …
Three-dimensional memory device containing a polygonal lattice of support pillar structures and contact via structures and methods of manufacturing the same
Y Otsu, K Nagata, J Kanazawa - US Patent 10,937,801, 2021 - Google Patents
H10B43/23—EEPROM devices comprising charge-trap** gate insulators characterised by
three-dimensional arrangements, eg with cells on different height levels with source and …
three-dimensional arrangements, eg with cells on different height levels with source and …
Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same
A Rajashekhar, F Zhou, RS Makala, Y Zhang… - US Patent …, 2021 - Google Patents
A three-dimensional memory device includes an alternating stack of source layers and drain
layers located over a substrate, memory openings vertically extending through the …
layers located over a substrate, memory openings vertically extending through the …
Three-dimensional memory device including discrete memory elements and method of making the same
A Rajashekhar, RS Makala, F Zhou… - US Patent …, 2023 - Google Patents
2020-08-24 Assigned to SANDISK TECHNOLOGIES LLC reassignment SANDISK
TECHNOLOGIES LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …
TECHNOLOGIES LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …
Three-dimensional memory device containing metal-organic framework inter-word line insulating layers
RNB Said, S Kanakamedala, F Zhou… - US Patent …, 2022 - Google Patents
A three-dimensional memory device includes a vertically alternating stack of insulating
layers and electrically conductive layers located over a top surface of a substrate and …
layers and electrically conductive layers located over a top surface of a substrate and …
Vertically stacked memory elements with air gap
AD Lilak, PR Morrow, HJ Yoo, ST Ma… - US Patent …, 2023 - Google Patents
A memory structure includes conductive lines extending horizontally in a spaced apart
fashion within a vertical stack above a base or substrate. The vertical stack includes a …
fashion within a vertical stack above a base or substrate. The vertical stack includes a …
Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the same
F Amano, Y Totoki, S Takuma - US Patent 11,637,038, 2023 - Google Patents
US11637038B2 - Three-dimensional memory device containing self-aligned lateral contact
elements and methods for forming the same - Google Patents US11637038B2 - Three-dimensional …
elements and methods for forming the same - Google Patents US11637038B2 - Three-dimensional …
Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same
S Kanakamedala, RS Makala, YS Lee - US Patent 11,244,953, 2022 - Google Patents
(57) ABSTRACT A three-dimensional memory device includes an alternating stack of
insulating layers and word lines that are made of molybdenum layers located over a …
insulating layers and word lines that are made of molybdenum layers located over a …
Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement
T Hinoue, Y Mukae, I Ryousuke, M Tsutsumi… - US Patent …, 2024 - Google Patents
A method of forming a three-dimensional memory device includes forming an alternating
stack of insulating layers and sacrificial material layers over a substrate, forming a memory …
stack of insulating layers and sacrificial material layers over a substrate, forming a memory …
Three-dimensional memory device and method of making thereof using double pitch word line formation
N Takeguchi, M Tsutsumi, S Shimabukuro… - US Patent App. 17 …, 2022 - Google Patents
US20220406793A1 - Three-dimensional memory device and method of making thereof
using double pitch word line formation - Google Patents US20220406793A1 - Three-dimensional …
using double pitch word line formation - Google Patents US20220406793A1 - Three-dimensional …