Multi-wavelength lasers, especially the triple-wavelength laser around 1060 nm, could be
produced by the 4F3/2→ 4I11/2 transition of Nd3+ and present numerous challenges and …

Resistive switching—the current-and voltage-induced change of electrical resistance—is at
the core of memristive devices, which play an essential role in the emerging field of …

The metal‐insulator phase transitions in V2O3 are considered archetypal manifestations of
Mott physics. Despite decades of research, the effects of do**, pressure, and anisotropic …

Electrical triggering of a metal–insulator transition (MIT) often results in the formation of
characteristic spatial patterns such as a metallic filament percolating through an insulating …

Controlling the Mott transition through strain engineering is crucial for advancing the
development of memristive and neuromorphic computing devices. Yet, Mott insulators are …

The practical applications for the distinctive functions of metamagnetic Heusler alloys, such
as magnetic shape memory effect, various caloric effects, etc., strongly depend on the phase …

Bulk V 2 O 3 features concomitant metal-insulator (MIT) and structural (SPT) phase
transitions at TC∼ 160 K. In thin films, where the substrate clam** can impose …

Vanadium sesquioxide (V 2 O 3) is a strongly correlated electronic material that famously
undergoes a triple coupled first-order transition where it transitions from a paramagnetic …

Many correlated oxides feature an insulator-to-metal transition as the temperature is
increased. In thin films, this transition can be electrically induced by localized Joule heating …

V 2 O 3 presents a complex interrelationship between the metal–insulator transition and the
structural rhombohedral-monoclinic one in temperature, as a function of sample thickness …