High photoconductive gain in a GaAs/PbS heterojunction based SWIR detector
An internal quantum efficiency (IQE), defined as the electron–hole pair to photon conversion
ratio, of∼ 10 was obtained for an n-GaAs/p-PbS heterojunction when illuminating the device …
ratio, of∼ 10 was obtained for an n-GaAs/p-PbS heterojunction when illuminating the device …
Trap-free heterostructure of PbS nanoplatelets on InP (001) by chemical epitaxy
Semiconductor nanocrystalline heterostructures can be produced by the immersion of
semiconductor substrates into an aqueous precursor solution, but this approach usually …
semiconductor substrates into an aqueous precursor solution, but this approach usually …
Electrical and optical characterization of extended SWIR detectors based on thin films of nano-columnar PbSe
There is an increasing demand for detectors with extended Short Wavelength Infrared
(SWIR) absorption at wavelengths between 1.6 μm and 2.8 μm. Towards that end, PbSe …
(SWIR) absorption at wavelengths between 1.6 μm and 2.8 μm. Towards that end, PbSe …
On the “Chemical Inertness” of Teflon in Chemical Synthesis
Impurities in Teflon, a material which has become synonymous with chemical inertness,
were found to strongly influence the short wave infrared (SWIR) response of solution …
were found to strongly influence the short wave infrared (SWIR) response of solution …
The role of traps in dark current and photocurrent of chemical bath deposition grown nano-domains PbS/GaAs heterojunction layers
Lead sulfide (PbS) nano-domain (ND) thin layers were grown by a chemical bath deposition
technique on a heavily doped n-type GaAs substrate forming a heterojunction. The PbS …
technique on a heavily doped n-type GaAs substrate forming a heterojunction. The PbS …