[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Recent development of vertical GaN power devices
T Oka - Japanese Journal of Applied Physics, 2019 - iopscience.iop.org
Gallium nitride (GaN) is an attractive material for high-frequency and high-power devices.
Due to the availability of relatively high-quality free-standing bulk GaN substrates, the …
Due to the availability of relatively high-quality free-standing bulk GaN substrates, the …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with
novel ion implantation techniques. We used two different methods to form the lateral pn grids …
novel ion implantation techniques. We used two different methods to form the lateral pn grids …
Materials and processing issues in vertical GaN power electronics
Silicon-based power devices are reaching their fundamental performance limit. The use of
wide-bandgap semiconductors with superior material properties over silicon offers the …
wide-bandgap semiconductors with superior material properties over silicon offers the …
High-Voltage and High- Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination
S Han, S Yang, K Sheng - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …
Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)
Y Sun, X Kang, Y Zheng, J Lu, X Tian, K Wei, H Wu… - Electronics, 2019 - mdpi.com
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated
outstanding features in high-frequency and high-power applications. This paper reviews …
outstanding features in high-frequency and high-power applications. This paper reviews …
High-voltage quasi-vertical GaN junction barrier Schottky diode with fast switching characteristics
In this letter, we report a quasi-vertical GaN junction barrier Schottky diode on low-cost
sapphire substrate. With the high quality GaN epitaxy and selective-area p-islands formed …
sapphire substrate. With the high quality GaN epitaxy and selective-area p-islands formed …
Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics
and nondestructive breakdown were realized using selective-area p-type do** via Mg ion …
and nondestructive breakdown were realized using selective-area p-type do** via Mg ion …
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode
with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra …
with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra …