Automatic differentiable nonequilibrium Green's function formalism: An end-to-end differentiable quantum transport simulator
The state-of-the-art first-principles quantum transport theory and modeling are based on
carrying out self-consistent atomistic calculations within the Keldysh nonequilibrium Green's …
carrying out self-consistent atomistic calculations within the Keldysh nonequilibrium Green's …
Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations
This work presents an accurate, scalable, and efficient hybrid machine learning (ML) and
neural network (NN) model based, cross‐platform application to analyze and estimate …
neural network (NN) model based, cross‐platform application to analyze and estimate …
[HTML][HTML] Hierarchical simulation of nanosheet field effect transistor: NESS flow
Nanosheet gate-all-around transistor devices have been an important contenders for future
technology nodes. Compared to FinFETs they have superior electrostatic control. The …
technology nodes. Compared to FinFETs they have superior electrostatic control. The …
Tcad simulation of novel semiconductor devices
Simulation of conventional and emerging electronic devices using Technology Computer
Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well …
Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well …
AD-NEGF: An End-to-End Differentiable Quantum Transport Simulator for Sensitivity Analysis and Inverse Problems
Since proposed in the 70s, the Non-Equilibrium Green Function (NEGF) method has been
recognized as a standard approach to quantum transport simulations. Although it achieves …
recognized as a standard approach to quantum transport simulations. Although it achieves …
The study of electron mobility on ultra-scaled silicon nanosheet FET
The nanosheet FET (NSFET) is the successor to FinFET, and its mobility significantly affects
device performance. In this paper, we investigate the impact of phonon (ph) and surface …
device performance. In this paper, we investigate the impact of phonon (ph) and surface …
Density gradient based quantum-corrected 3D drift-diffusion simulator for nanoscale MOSFETs
T Dutta, C Medina-Bailon, N Xeni… - 2021 IEEE 16th …, 2021 - ieeexplore.ieee.org
In this work, we have developed a solver for the three-dimensional density gradient (DG)
equation which is used to apply quantum corrections (QC) to the classical drift-diffusion (DD) …
equation which is used to apply quantum corrections (QC) to the classical drift-diffusion (DD) …
[HTML][HTML] Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source
In this paper, utilising the non-equilibrium Green's function (NEGF) formalism within the new
device simulator NESS (Nano-Electronic Software Simulator) developed at the University of …
device simulator NESS (Nano-Electronic Software Simulator) developed at the University of …
Navigating the Nexus: Exploring the Fusion of AI and Nanotechnology for Cutting-Edge Advances
The convergence of artificial intelligence (AI) and nanotechnology has initiated a
transformative journey, introducing innovative possibilities across various fields. This review …
transformative journey, introducing innovative possibilities across various fields. This review …
Predictive Simulation of Nanosheet Transistors Including the Impact of Access Resistance
T Dutta, F Adamu-Lema, N Xeni… - … on Simulation of …, 2024 - ieeexplore.ieee.org
In this work we present a hierarchical computational approach to study the impact of
source/drain access resistance in nanosheet transistors at the 3nm technology node and …
source/drain access resistance in nanosheet transistors at the 3nm technology node and …