Emerging near‐infrared luminescent materials for next‐generation broadband optical communications

B Xu, C **, JS Park, H Liu, X Lin, J Cui, D Chen… - InfoMat, 2024 - Wiley Online Library
The rapid development of emerging technologies observed in recent years, such as artificial
intelligence, machine learning, mobile internet, big data, cloud computing, and the Internet …

[HTML][HTML] Optically managing thermal energy in high-power yb-doped fiber lasers and amplifiers: a brief review

N Yu, J Ballato, MJF Digonnet… - Current optics and …, 2022 - coppjournal.org
Fiber lasers have made remarkable progress over the past three decades, and they now
serve farreaching applications and have even become indispensable in many technology …

Nonlinear optical characteristics of thermodynamic effects-and electric field-triggered Mathieu quantum dot

MK Bahar, P Başer - Micro and Nanostructures, 2022 - Elsevier
In this work, the total refractive index (TRICs) and total absorption coefficients (TACs) of a
spherical quantum dot with the Mathieu potential encompassement, generated by using In x …

48 W continuous-wave output from a high-efficiency single emitter laser diode at 915 nm

Y Liu, G Yang, Y Zhao, S Tang, Y Lan… - IEEE Photonics …, 2022 - ieeexplore.ieee.org
Improving the power and efficiency of 9xx-nm broad-area laser diodes has a great help in
reducing the cost of laser systems and expanding applications. This letter presents an …

Noise characteristics of semiconductor lasers with narrow linewidth

H Wang, Y Lei, Q Cui, S Li, X Song, Y Chen, L Liang… - Heliyon, 2024 - cell.com
Narrow-linewidth semiconductor lasers are highly valued in scientific research and industrial
applications owing to their high coherence and low phase noise characteristics, particularly …

High-Power Laser Diodes Based on InGaAs (P)/Al (In) GaAs (P)/GaAs Heterostructures with Low Internal Optical Loss

SO Slipchenko, DA Veselov, VV Zolotarev… - Bulletin of the Lebedev …, 2023 - Springer
The main results of the studies on designing high-power semiconductor laser diodes based
on asymmetric semiconductor heterostructures InGaAs (P)/Al (In) GaAs (P)/GaAs with low …

Wet Chemical Synthesis of AlxGa1− xAs Nanostructures: Investigation of Properties and Growth Mechanisms

Y Suchikova, S Kovachov, I Bohdanov, M Konuhova… - 2024 - dspace.lu.lv
This study focuses on the wet chemical synthesis of AlxGa1− xAs nanostructures,
highlighting how different deposition conditions affect the film morphology and material …

Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN

DN Talwar, TR Yang, HH Lin - Crystals, 2023 - mdpi.com
The lattice dynamical properties of dilute InAs1− xNx/InP (001) epilayers (0≤ x≤ 0.03)
grown by gas-source molecular beam epitaxy were carefully studied experimentally and …

Optimized performance of 905 nm semiconductor lasers by using the high strain quantum well

J Wang, A Qi, C Xu, W Zhang, T Fu, X Zhou… - Optics …, 2023 - opg.optica.org
We propose and experimentally demonstrate that the lasing power and characteristic
temperature (T_0) of 905 nm semiconductor lasers can be optimized by use of the high …

Lasers with double asymmetric barrier layers: Direct versus indirect capture of carriers into the lasing ground state in quantum dots

C Hammack, LV Asryan - Electronics Letters, 2024 - Wiley Online Library
Static and dynamic characteristics of a quantum dot (QD) laser with double asymmetric
barrier layers–an advanced type of semiconductor laser–are studied. Both direct and …