Ultrahigh energy storage in superparaelectric relaxor ferroelectrics

H Pan, S Lan, S Xu, Q Zhang, H Yao, Y Liu, F Meng… - Science, 2021 - science.org
Electrostatic energy storage technology based on dielectrics is fundamental to advanced
electronics and high-power electrical systems. Recently, relaxor ferroelectrics characterized …

Chemical route derived bismuth ferrite thin films and nanomaterials

Q Zhang, D Sando, V Nagarajan - Journal of Materials Chemistry C, 2016 - pubs.rsc.org
Bismuth ferrite (BiFeO3–BFO) is a prototypical lead-free single phase multiferroic which
shows strong ferroelectric and antiferromagnetic properties simultaneously, together with …

Influence of plume properties on thin film composition in pulsed laser deposition

A Ojeda‐G‐P, M Döbeli, T Lippert - Advanced Materials …, 2018 - Wiley Online Library
Despite the apparent simplicity of pulsed laser deposition, consistent deposition of thin films
with the desired thickness, composition, crystallinity, and quality still remains challenging …

BiFeO 3–SrTiO 3 thin film as a new lead-free relaxor-ferroelectric capacitor with ultrahigh energy storage performance

H Pan, Y Zeng, Y Shen, YH Lin, J Ma, L Li… - Journal of Materials …, 2017 - pubs.rsc.org
Capacitors with high electrostatic energy density, long-term stability, and environmental
friendliness are strongly demanded in modern electrical and electronic systems. Here, we …

Regulation of Ferroelectric Polarization to Achieve Efficient Charge Separation and Transfer in Particulate RuO2/BiFeO3 for High Photocatalytic Water Oxidation …

JH Shah, B Huang, AM Idris, Y Liu, AS Malik, W Hu… - Small, 2020 - Wiley Online Library
Exploiting spontaneous polarization of ferroelectric materials to achieve high charge
separation efficiency is an intriguing but challenging research topic in solar energy …

Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p‐Type Schottky‐Like Pt/Bi1–δFeO3 Interfaces

A Tsurumaki, H Yamada, A Sawa - Advanced Functional …, 2012 - Wiley Online Library
This work reports a resistive switching effect observed at rectifying Pt/Bi1–δFeO3 interfaces
and the impact of Bi deficiencies on its characteristics. Since Bi deficiencies provide hole …

Enhanced electric resistivity and dielectric energy storage by vacancy defect complex

H Pan, N Feng, X Xu, W Li, Q Zhang, S Lan… - Energy Storage …, 2021 - Elsevier
The presence of uncontrolled defects is a longstanding challenge for achieving high electric
resistivity and high energy storage density in dielectric capacitors. In this study, opposite to …

Oxygen concentration and its effect on the leakage current in BiFeO3 thin films

H Yang, YQ Wang, H Wang, QX Jia - Applied Physics Letters, 2010 - pubs.aip.org
Epitaxial c-axis oriented BiFeO 3 (BFO) films were fabricated on (001) oriented SrTiO 3
substrates by pulsed laser deposition. Nuclear resonance backscattering spectrometry was …

Rhombohedral BiFeO3 thick films integrated on Si with a giant electric polarization and prominent piezoelectricity

H Zhu, Y Yang, W Ren, M Niu, W Hu, H Ma, J Ouyang - Acta Materialia, 2020 - Elsevier
Strikingly challenging the widely accepted opinion that a giant spontaneous polarization
(Ps) of~ 150 μC/cm2 in pure BiFeO3 can only be achieved in strain-induced tetragonal …

Strong oxygen pressure dependence of ferroelectricity in BaTiO3/SrRuO3/SrTiO3 epitaxial heterostructures

AP Chen, F Khatkhatay, W Zhang, C Jacob… - Journal of Applied …, 2013 - pubs.aip.org
The oxygen pressure effect on the structural and ferroelectric properties have been studied
in epitaxial BaTiO 3 (BTO)/SrRuO 3/SrTiO 3 (001) heterostructures grown by pulsed laser …