Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …

The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the
external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other …

InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to
mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs) …

The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with
large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier …

Data and analysis are presented for the study of efficiency droop in visible III-nitride light-
emitting diodes (LEDs) considering the effects of both electron spill-over out of active region …

Here, we reveal a remarkable (and surprising) physical property of GaN: it is extremely wear
resistant. In fact, we measured the wear rate of GaN is approaching wear rates reported for …

A tapered AlGaN electron blocking layer with step-graded aluminum composition is
analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally …

Due to their low power consumption, long lifetime and high efficiency, nitrides based white
light-emitting-diodes (LEDs) have long been considered to be a promising technology for …

We systematically study the origins and mechanisms for unintentional incorporation of
gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto …